Fabrication and Optical Properties of Green emission semipolar (101̅1) InGaN/GaN MQWs Selective Grown on GaN Nanopyramid Arrays


We report that the high crystalline and high efficiency green emission semipolar (101̅1) InGaN/GaN multiple quantum wells (MQWs) grown on the (101̅1) facets of GaN nanopyramid arrays by selective area epitaxy. Clear and sharp interfaces of the semipolar (101̅1) InGaN/GaN MQWs was observed by transmission electron microscopy images. As comparing with (0001) MQWs, the internal electric field of (101̅1) MQWs was remarkably reduced from 1.7 MV/cm to 0.5 MV/cm, and the room temperature (RT) internal quantum efficiency (IQE) at green emission was enhanced by about 80%. This greatly enhancement of IQE is due to suppress the polarization effect in the (101̅1) MQWs which shorten the radiative recombination to compete with nonradiative recombination at RT. These results evince that the (101̅1) planes are promising for solving the efficiency green gap of III-nitride light emitters.

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Chang, SP., Chang, JR., Huang, JK. et al. Fabrication and Optical Properties of Green emission semipolar (101̅1) InGaN/GaN MQWs Selective Grown on GaN Nanopyramid Arrays. MRS Online Proceedings Library 1324, 1106 (2011). https://doi.org/10.1557/opl.2011.962

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