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Surface Photovoltage Study of Indium Phosphide Nanowire Networks

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Abstract

Surface photovoltage of three-dimensional networks composed of fused indium phosphide (InP) nanowires is discussed. Particular emphasis is given to the dependence of surface photovoltage on the chopping frequency of light that excites the nanowire network as observed in regions which are laterally separated from the excitation. The nanowire network is modeled as a thin film to simplify numerical solutions to transport equations which aids in the interpretation of diffusion and drift of photo-generated carriers within the nanowire network.

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Authors and Affiliations

  1. Baskin School of Engineering, University of California Santa Cruz, CA, 95064, Santa Cruz, USA

    Andrew J. Lohn & Nobuhiko P. Kobayashi

  2. Nanostructured Energy Conversion Technology and Research (NECTAR), Advanced Studies Laboratories, Univ. of California Santa Cruz – NASA Ames Research Center, CA, 94035, Moffett Field, USA

    Andrew J. Lohn & Nobuhiko P. Kobayashi

  3. Center for Nanotechnology, NASA Ames Research Center, CA, 94035, Moffett Field, USA

    Jin-Woo Han

Authors
  1. Andrew J. Lohn
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  2. Jin-Woo Han
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  3. Nobuhiko P. Kobayashi
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Lohn, A.J., Han, JW. & Kobayashi, N.P. Surface Photovoltage Study of Indium Phosphide Nanowire Networks. MRS Online Proceedings Library 1350, 704 (2011). https://doi.org/10.1557/opl.2011.873

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  • DOI: https://doi.org/10.1557/opl.2011.873

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