Abstract
Thermoelectric (TE) properties of erbium-silicon co-doped InxGa1-xN alloys (InxGa1-xN: Er + Si, 0≤x≤0.14), grown by metal organic chemical vapor deposition, have been investigated. It was found that doping of InGaN alloys with Er atoms of concentration, N[Er] larger than 5x1019 cm-3, has substantially reduced the thermal conductivity, κ, in low In content InGaN alloys. It was observed that κ decreases as N[Er] increases in Si co-doped In0.10Ga0.90N alloys. A room temperature ZT value of ~0.05 was obtained in In0.14Ga0.86N: Er + Si, which is much higher than that obtained in un-doped InGaN with similar In content. Since low In content InGaN is stable at high temperatures, these Er+Si co-doped InGaN alloys could be promising TE materials for high temperature applications.
This is a preview of subscription content, log in via an institution to check access.
Similar content being viewed by others
References
T. M. Tritt Science 283, 804 (1999).
A. Boukai, K. Xu, and J. R. Heath, Adv. Mater. 18, 864 (2006).
B. Poudel, Q. Hao, Y. Ma, Y. Lan, A. Minnich, B. Yu, X. Yan, D. Wang, A. Muto, D. Vashaee, X. Chen, J. Liu, M. Dressehaus, G. Chen, and Z. Ren, Science 320, 634 (2008).
M. Ohtaki, K. Araki, and K. Yamamoto, J. Electron. Mater. 38, 1234 (2009).
L. SM, D. Li, C. Yu, W. Jang, D. Kim, Z. Yao, P. Kim, and A. Majumdar, J. Heat Transfer 125, 881 (2003).
Q. He, Q. Hao, G. Chen, B. Poudel, X. Wang, D. Wang, and Z. Ren, Appl. Phys. Lett. 91, 052505 (2007).
A. Charoenphakdee, K. Kurosaki, A. Harnwunggmoung, H. Muta, and S. Yamanaka, J. Alloys Compound 496, 53 (2010).
D. M. Rowe and V. S. Shukla, J. Appl. Phys. 52, 7421 (1981).
X. W. Wang, H. Lee, Y.C. Lan, G.H. Zhu, G. Joshi, D. Z. Wang, J. Yang, A. J. Muto, M. Y. Tang, J. Klatsky, S. Song, M. S. Dresselhaus, G. Chen, and Z. F. Ren, Appl. Phys. Lett. 93, 193121 (2008).
I. M. Kokanbaev, J. Eng. Physics and Thermophysics 76, 432 (2003).
J. W. Roh, S. Y. Jang, J. Kang, S. Lee, J. Noh, W. Kim, J. Park, and W. Lee, Appl. Phys. Lett. 96, 103101 (2010).
A. Harnwunggmoung, K. Kurosaki, H. Muta, and S. Yamanaka, Appl. Phys. Lett. 96, 202107 (2010).
M. Ohtaki, T. Tsubota, K. Eguchi, and H. Arai, J. Appl. Phys. 79, 1816 (1996).
C. B. Satterthwaite and R. W. Ure, Phy. Rev. 108, 1164 (1957).
R. Venkataubramanian, E. Siivoa, T. Colpitis, and B. O’Quinn, Nature 413, 597 (2001).
L. M. Goncalves, C. Couto, P. Alpuim, A. G. Rolo, F. Volklein, and J. H. Correia, Thin Solid Flims 518, 2816 (2010).
S. Yamguchi, R. Izaki, K. Yamagiwa, K. Taki, Y. Iwamura, and A. Yamamoto, Appl. Phys. Lett. 83, 5398 (2003).
S. Yamagchi, Y. Iwamura, and A. Yamamoto, Appl. Phys. Lett. 82, 2065 (2003).
A. J. Minnich, M. S. Dresselhaus, Z. F. Ren, and G. Chen, Energy Environ. Sci. 2, 466 (2009).
J. Bahk, Z. Bian, M. Zebarjadi, J. M. O. Zide, H. Lu, D. Xu, J. Feser, G. Zeng, A. Majumdar, A. C. Gossard, A. Shakoun, and J. E. Bowers, Phys. Rev. B 81, 235209 (2010).
A. Sztein, H. Ohta, J. Sonoda, A. Ramu, J. Bowers, S. DenBaars, and S. Nakamura, Appl. Phys. Express 2, 111003 (2009).
B. N. Pantha, R. Dahal, J. Li, J. Y. Lin, H. X. Jiang, and G. Pomrenke, Appl. Phys. Lett. 92, 042112 (2008).
B. N. Pantha, R. Dahal, J. Li, J. Y. Lin, H. X. Jiang, and G. Pomrenke, J. Electron. Mater. 38, 1132 (2009).
G. D. Mahan, “Rare Earth Thermoelectncs,” Proceedings of the 16th International Conference on Thermoelectncs, Dresden, Germany, 1997, pp. 21–24.
W. Kim, J. Zide, A. Gossard, D. Klenov, S. Stemmer, A. Shakoun, and A. Majumdar, Phys. Rev. Lett. 96, 045901 (2006).
D. G. Cahill, Rev. Sci. Instrum. 61, 802 (1990).
D. G. Cahill, M. Katiyar, and J. R. Ablson, Phys. Rev. B 50, 6077 (1994).
Author information
Authors and Affiliations
Rights and permissions
About this article
Cite this article
Aryal, K., Feng, I.W., Pantha, B.N. et al. Thermoelectric Properties of Er-doped InGaN Alloys for High Temperature Applications. MRS Online Proceedings Library 1325, 708 (2011). https://doi.org/10.1557/opl.2011.849
Published:
DOI: https://doi.org/10.1557/opl.2011.849