Thermoelectric Properties of Er-doped InGaN Alloys for High Temperature Applications

MRS Online Proceedings Library volume 1325, Article number: 708 (2011) Cite this article

Abstract

Thermoelectric (TE) properties of erbium-silicon co-doped InxGa1-xN alloys (InxGa1-xN: Er + Si, 0≤x≤0.14), grown by metal organic chemical vapor deposition, have been investigated. It was found that doping of InGaN alloys with Er atoms of concentration, N[Er] larger than 5x1019 cm-3, has substantially reduced the thermal conductivity, κ, in low In content InGaN alloys. It was observed that κ decreases as N[Er] increases in Si co-doped In0.10Ga0.90N alloys. A room temperature ZT value of ~0.05 was obtained in In0.14Ga0.86N: Er + Si, which is much higher than that obtained in un-doped InGaN with similar In content. Since low In content InGaN is stable at high temperatures, these Er+Si co-doped InGaN alloys could be promising TE materials for high temperature applications.

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  1. Department of Electrical and Computer Engineering, Texas Tech University, 79409, Lubbock, TX, USA

    K. Aryal, I. W. Feng, B. N. Pantha, J. Li, J. Y. Lin & H. X. Jiang

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  1. K. Aryal
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  2. I. W. Feng
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  3. B. N. Pantha
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  4. J. Li
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Correspondence to K. Aryal.

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Aryal, K., Feng, I.W., Pantha, B.N. et al. Thermoelectric Properties of Er-doped InGaN Alloys for High Temperature Applications. MRS Online Proceedings Library 1325, 708 (2011). https://doi.org/10.1557/opl.2011.849

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