Enhanced Light Emission at Self-assembled GaN Inversion Domain Boundary

Abstract

We report the fabrication of GaN lateral polarity inversion heterostructure with self assembled crystalline inversion domain boundaries (IDBs). The sample was fabricated by two step molecular-beam epitaxy (MBE) with microlithography patterning in between to define IDBs. Despite the use of circular pattern, hexagonal crystalline IDBs were self assembled from the circular pattern during the second MBE growth. Both cathodoluminescent (CL) and photoluminescent (PL) measurements show a significant enhanced emission at IDBs and in particular at hexagonal corners. The ability to fabricate self assembled crystalline IDBs and its enhanced emission property can be useful in optoelectronic applications.

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References

  1. 1.

    T. Mukai, K. Takekawa, and S. Nakamura, Jpn. J. Appl. Phys., Part 2 37, L839 (1998).

  2. 2.

    O. Ambacher, J. Smart, J. R. Shealy, N. G. Weimann, K. Chu, M. Murphy, R. Dimitrov, L. Wittmer, M. Stutzmann, W. Rieger, and J. Hilsenbeck, J. Appl. Phys. 85, 3222 (1999).

    CAS  Article  Google Scholar 

  3. 3.

    M. Stutzmann, O. Ambacher, M. Eickhoff, U. Karrer, A. Lima Pimenta, R. Neuberger, J. Schalwig, R. Dimitrov, P. Schuck, and R. Grober, Phys. Status Solidi B 288, 505 (2001).

    Article  Google Scholar 

  4. 4.

    C. Iwamoto, X. Q. Shen, H. Okumura, H. Matuhata, and Y. Ikuhara, Appl. Phys. Lett. 79, 3941 (2001).

    CAS  Article  Google Scholar 

  5. 5.

    F. Liu, R. Collazo, S. Mita, Z. Sitar, G. Duscher, and S. J. Pennycook, Appl. Phys. Lett. 91, 203115 (2007).

    Article  Google Scholar 

  6. 6.

    J. E. Northrup, J. Neugebauer, and L. T. Romano, Phys. Rev. Lett. 77, 103 (1996).

    CAS  Article  Google Scholar 

  7. 7.

    V. Fiorentini, Appl. Phys. Lett. 82, 1182 (2003).

    CAS  Article  Google Scholar 

  8. 8.

    B. J. Rodriguez, A. Gruverman, A. I. Kingon, R. J. Nemanich, and O. Ambacher, Appl. Phys. Lett. 80, 4166 (2002).

    CAS  Article  Google Scholar 

  9. 9.

    Ryuji Katayama,a Yoshihiro Kuge, Kentaro Onabe, Tomonori Matsushita and Takashi Kondo, Appl. Phys. Lett. 89, 231910 (2006).

    Article  Google Scholar 

  10. 10.

    P. J. Schuck, M. D. Mason, R. D. Grober, O. Ambacher, A. P. Lima, C. Miskys, R. Dimitrov, and M. Stutzmann, Appl. Phys. Lett. 79, 952 (2001).

    CAS  Article  Google Scholar 

  11. 11.

    X. Q. Shen, T. Ide, S. H. Cho, M. Shimizu, S. Hara, and H. Okumura, Appl. Phys. Lett. 77, 4013 (2000).

    CAS  Article  Google Scholar 

  12. 12.

    D. Huang, P. Visconti, K. M. Jones, M. A. Reshchikov, F. Yun, A. A. Baski, T. King, and H. Morkoc, Appl. Phys. Lett. 78, 4145 (2001).

    CAS  Article  Google Scholar 

  13. 13.

    A. R. Smith, R. M. Feenstra, D. W. Greve, M.-S. Shin and M. Skowronski, J. Neugebauer, and J. E. Northrup, Appl. Phys. Lett. 72, 2114 (2001).

    Article  Google Scholar 

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Correspondence to Mei-Chun Liu.

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Liu, MC., Cheng, YJ., Chang, JR. et al. Enhanced Light Emission at Self-assembled GaN Inversion Domain Boundary. MRS Online Proceedings Library 1324, 904 (2011). https://doi.org/10.1557/opl.2011.840

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