Optoelectronic characterization of morphology-controlled zinc oxide nanowires

MRS Online Proceedings Library volume 1315, Article number: 605 (2011) Cite this article

Abstract

In this paper, we report the characterization of vertically aligned ZnO nanowire (NW) arrays synthesized by metal-catalyzed chemical vapor deposition. The growth mechanism of ZnO NWs may be related to vapor-solid-nucleation. Morphological, structural, optical and field emission characteristics can be modified by varying the growth time. For growth time reaches 120 min, the length and the diameter of ZnO NWs are 1.5 μm and 350 nm, and they also show preferential growth orientation along the c-axis. Moreover, strong alignment and uniform distribution of ZnO NWs can effectively enhance the antireflection to reach the average reflectance of 5.7% in the visible region as well. Field emission measurement indicated that the growth time play an important role in density- and morphology-controlled ZnO NWs, and thus ZnO NWs are expected to be used in versatile optoelectronic devices.

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Affiliations

  1. Department of Electronic Engineering, Chang Gung University, 259 Wen-Hwa 1st Road, 333, Kwei-Shan Tao-Yuan, Taiwan

    Shou-Yi Kuo & Chun-Chieh Wang

  2. Green Technology Research Center, Chang Gung University, 259 Wen-Hwa 1st Road, 333, Kwei-Shan Tao-Yuan, Taiwan

    Shou-Yi Kuo

  3. Department of Photonics Engineering, Yuan-Ze University, 135 Yuan-Tung Road, 320, Chung-Li, Taiwan

    Fang-I Lai & Woei-Tyng Lin

Authors
  1. Shou-Yi Kuo
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  2. Fang-I Lai
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  3. Chun-Chieh Wang
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  4. Woei-Tyng Lin
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Correspondence to Shou-Yi Kuo.

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Kuo, SY., Lai, FI., Wang, CC. et al. Optoelectronic characterization of morphology-controlled zinc oxide nanowires. MRS Online Proceedings Library 1315, 605 (2011). https://doi.org/10.1557/opl.2011.713

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