Photoluminescence X-ray Excitation Spectra in Eu-doped GaN Grown by Organometallic Vapor Phase Epitaxy

Abstract

X-ray-excited luminescence of GaN doped with Eu ions as a luminescent center was observed in the wavelength range from 350 nm to 650 nm. Three peaks at 375 nm, 550 nm and 622 nm were found. To survey the mechanism of the photoluminescence due to non-resonance excitation, photoluminescence X-ray excitation spectra are also measured. The mechanism of the luminescence occurrence was briefly discussed based on the model developed by Emura et al.

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    Other outer shells of each element, of coarse, are excited. However, the absorption coefficients for these orbital are very low at 7100 eV.

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Correspondence to S. Emura.

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Emura, S., Higashi, K., Itadani, A. et al. Photoluminescence X-ray Excitation Spectra in Eu-doped GaN Grown by Organometallic Vapor Phase Epitaxy. MRS Online Proceedings Library 1342, 302 (2011). https://doi.org/10.1557/opl.2011.1241

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