Diffusion Mechanisms and Intrinsic Point-Defect Properties in Silicon

MRS Bulletin volume 25, pages22–27(2000)Cite this article

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References

  1. 1.

    P.M. Fahey, P.B. Griffin, and J.D. Plummer, Rev. Mod. Phys. 61 (1989) p. 289.

    CAS  Article  Google Scholar 

  2. 2.

    S.M. Hu, Mater. Sci. Eng. R13 (1994) p. 105.

    CAS  Article  Google Scholar 

  3. 3.

    H. Bracht, E.E. Haller, and R. Clark-Phelps, Phys. Rev. Lett. 81 (1998) p. 393.

    CAS  Article  Google Scholar 

  4. 4.

    N.A. Stolwijk and H. Bracht, in Diffusion in Semiconductors and Non-Metallic Solids, Landolt-Börnstein New Series, Vol. III/33, Subvolume A: Diffusion in Semiconductors, edited by D.L. Beke (Springer-Verlag, Berlin, 1998) and references therein.

  5. 5.

    J.W. Corbett, R.S. McDonald, and G.D. Watkins, J. Phys. Chem. Solids 25 (1964) p. 873.

    CAS  Article  Google Scholar 

  6. 6.

    G.D. Watkins, J.W. Corbett, and R.S. McDonald, J. Appl. Phys. 53 (1982) p. 7097.

    CAS  Article  Google Scholar 

  7. 7.

    U. Gösele, W. Frank, and A. Seeger, Appl. Phys. 23 (1980) p. 361.

    Article  Google Scholar 

  8. 8.

    F. Morehead, N.A. Stolwijk, W. Meyberg, and U. Gösele, Appl. Phys. Lett. 42 (1983) p. 690.

    CAS  Article  Google Scholar 

  9. 9.

    H. Bracht, N.A. Stolwijk, and H. Mehrer, Phys. Rev. B 52 (1995) p. 16542.

    CAS  Article  Google Scholar 

  10. 10.

    N.A. Stolwijk, Phys. Rev. B. 42 (1990) p. 5793.

    CAS  Article  Google Scholar 

  11. 11.

    M. Yoshida and E. Arai, Jpn. J. Appl. Phys. 35 (1996) p. 44.

    CAS  Article  Google Scholar 

  12. 12.

    M. Uematsu, J. Appl. Phys. 82 (1997) p. 2228.

    CAS  Article  Google Scholar 

  13. 13.

    P. Fahey, S.S. Iyer, and G.J. Scilla, Appl. Phys. Lett. 54 (1989) p. 843.

    CAS  Article  Google Scholar 

  14. 14.

    H.-J. Gossmann, T.E. Haynes, P.A. Stolk, D.C. Jacobson, G.H. Gilmer, J.M. Poate, H.S. Luftman, T.K. Mogi, and M.O. Thompson, Appl. Phys. Lett. 71 (1997) p. 3862.

    CAS  Article  Google Scholar 

  15. 15.

    P. Fahey, G. Barbuscia, M. Moslehi, and R.W. Dutton, Appl. Phys. Lett. 46 (1985) p. 784.

    CAS  Article  Google Scholar 

  16. 16.

    N.E.B Cowern, J. Appl. Phys. 64 (1988) p. 4484.

    CAS  Article  Google Scholar 

  17. 17.

    A. Ural, P.B. Griffin, and J.D. Plummer, Appl. Phys. Lett. 73 (1998) p. 1706.

    CAS  Article  Google Scholar 

  18. 18.

    A. Giese, H. Bracht, N.A. Stolwijk, and J.T. Walton, J. Appl. Phys. 83 (1998) p. 8062.

    CAS  Article  Google Scholar 

  19. 19.

    A. Giese, H. Bracht, N.A. Stolwijk, and D. Baither, Mater. Sci. Eng., B 71 (2000) p. 160.

    Article  Google Scholar 

  20. 20.

    H. Bracht, Proc. Electrochem. Soc. 99–1 (1999) p. 357.

    Google Scholar 

  21. 21.

    H. Bracht, Physica B 273–274 (1999) p. 981.

    Article  Google Scholar 

  22. 22.

    W. Shockley and J.L. Moll, Phys. Rev. 119 (1960) p. 1480.

    CAS  Article  Google Scholar 

  23. 23.

    K.P. Chik, Radiat. Eff. 4 (1970) p. 33.

    CAS  Article  Google Scholar 

  24. 24.

    H. Bracht, Defect Diffusion Forum 143–147 (1997) p. 979.

    Article  Google Scholar 

  25. 25.

    A. Nylandsted Larsen, K. Kyllesbech Larsen, P.E. Andersen, and B.G. Svensson, J. Appl. Phys. 73 (1993) p. 691.

    CAS  Article  Google Scholar 

  26. 26.

    R.B. Fair, in Impurity Doping Processes in Silicon, edited by F. Wang (North Holland, Amsterdam, 1981) p. 315.

  27. 27.

    A. Nylandsted Larsen, P. Kringhoj, J. sen, and S. Yu. Shiryaev, J. Appl. Phys. 81 (1997) p. 2173 and references therein.

    Article  Google Scholar 

  28. 28.

    G.D. Watkins, J.R. Troxell, and A.P. Chatterjee, in Inst. Phys. Conf. Ser. No. 46 (Institute of Physics, New York, 1979) p. 16.

    Google Scholar 

  29. 29.

    A. Seeger and K.P. Chik, Phys. Status Solidi 29 (1968) p. 455.

    CAS  Article  Google Scholar 

  30. 30.

    P.A. Stolk, H.-J. Gossmann, D.J. Eaglesham, D.C. Jacobson, C.S. Rafferty, G.H. Gilmer, M. Jaraíz, J.M. Poate, H.S. Luftman, and T.E. Haynes, J. Appl. Phys. 81 (1997) p. 6031.

    CAS  Article  Google Scholar 

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  1. Hartmut Bracht
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Bracht, H. Diffusion Mechanisms and Intrinsic Point-Defect Properties in Silicon. MRS Bulletin 25, 22–27 (2000). https://doi.org/10.1557/mrs2000.94

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