Nanoscale magnetization reversal by electric field-induced ion migration


Nanoscale magnetization modulation by electric field enables the construction of low-power spintronic devices for information storage applications and, etc. Electric field-induced ion migration can introduce desired changes in the material’s stoichiometry, defect profile, and lattice structure, which in turn provides a versatile and convenient means to modify the materials’ chemical-physical properties at the nanoscale and in situ. In this review, we provide a brief overview on the recent study on nanoscale magnetization modulation driven by electric field-induced migration of ionic species either within the switching material or from external sources. The formation of magnetic conductive filaments that exhibit magnetoresistance behaviors in resistive switching memory via foreign metal ion migration and redox activities is also discussed. Combining the magnetoresistance and quantized conductance switching of the magnetic nanopoint contact structure may provide a future high-performance device for non-von Neumann computing architectures.

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The authors acknowledge the financial support from the National Key R&D Program of China (2017YFB0405604 and 2016YFA0201102), the National Natural Science Foundation of China (61722407, 61674153, 51525103, 61704178, 11474295, and 51472210), China Postdoctoral Science Foundation (2016LH0050 and 2017M610379), K. C. Wong Education Foundation (rczx0800), the Natural Science Foundation of Zhejiang Province (LR17E020001), the Provincial Natural Science Foundation of Hunan (2018JJ4037), Ningbo Science and Technology Innovation Team (2015B11001), and Key Laboratory of Advanced Materials of Ministry of Education (2017AML04).

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Correspondence to Gang Liu or Xuejun Zheng.

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Chen, Q., Liu, G., Gao, S. et al. Nanoscale magnetization reversal by electric field-induced ion migration. MRS Communications 9, 14–26 (2019).

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