Review and perspective on ferroelectric HfO2-based thin films for memory applications

Abstract

The ferroelectricity in fluorite-structure oxides such as hafnia and zirconia has attracted increasing interest since 2011. They have various advantages such as Si-based complementary metal oxide semiconductor-compatibility, matured deposition techniques, a low dielectric constant and the resulting decreased depolarization field, and stronger resistance to hydrogen annealing. However, the wake-up effect, imprint, and insufficient endurance are remaining reliability issues. Therefore, this paper reviews two major aspects: the advantages of fluorite-structure ferroelectrics for memory applications are reviewed from a material’s point of view, and the critical issues of wake-up effect and insufficient endurance are examined, and potential solutions are subsequently discussed.

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Acknowledgment

CSH acknowledges the support given by the Global Research Laboratory Program (2012 1A1A2040157) of the National Research Foundation of the South Korean government. TM and US acknowledge the EFRE fund of the European Commission and the Free State of Saxony (Germany). MHP was supported by Humboldt Postdoctoral Fellowship from Alexander von Humboldt Foundation.

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Correspondence to Uwe Schroeder or Cheol Seong Hwang.

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Park, M.H., Lee, Y.H., Mikolajick, T. et al. Review and perspective on ferroelectric HfO2-based thin films for memory applications. MRS Communications 8, 795–808 (2018). https://doi.org/10.1557/mrc.2018.175

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