Boron doping of ultrananocrystalline diamond films by thermal diffusion process

Abstract

A novel process for Boron doping of ultrananocrystalline diamond (UNCD) films, using thermal diffusion, is described. Hall measurements show an increase in carrier concentration from 1013 to 1020 cm~3. Ultraviolet Photoelectron Spectroscopy and x-ray Photoelectron Spectroscopy show a band gap of 4.4 eV, a work function of 5.1 eV and a Fermi level at 2.0 eV above the valence band. Boron atoms distribution through UNCD films, was measured by Secondary Ion Mass Spectrometry, revealing Boron atoms diffusivity of about 10~14 cm2/s. Raman spectroscopy and x-ray Diffraction analysis revealed that UNCD films did not suffer graphitization nor structural damage during annealing.

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Acknowledgments

Pablo Tirado acknowledges the Consejo Nacional de Ciencia y Tecnología (CONACYT) for their financial support during this research in the group of Dr. Auciello at the University of Texas at Dallas. Prof. O. Auciello acknowledges the valuable support from the University of Texas at Dallas, through funding provided by his Distinguished Endowed Chair professor position. Dr. Yuriy Kudriavtsev (CINVESTAV-IPN) acknowledges support from CINVESTAV.

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Correspondence to Orlando Auciello.

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The supplementary material for this article can be found at https://doi.org/10.1557/mrc.2018.157.

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Tirado, P., Alcantar-Peña, J.J., de Obaldia, E. et al. Boron doping of ultrananocrystalline diamond films by thermal diffusion process. MRS Communications 8, 1111–1118 (2018). https://doi.org/10.1557/mrc.2018.157

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