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Boron doping of ultrananocrystalline diamond films by thermal diffusion process

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Abstract

A novel process for Boron doping of ultrananocrystalline diamond (UNCD) films, using thermal diffusion, is described. Hall measurements show an increase in carrier concentration from 1013 to 1020 cm~3. Ultraviolet Photoelectron Spectroscopy and x-ray Photoelectron Spectroscopy show a band gap of 4.4 eV, a work function of 5.1 eV and a Fermi level at 2.0 eV above the valence band. Boron atoms distribution through UNCD films, was measured by Secondary Ion Mass Spectrometry, revealing Boron atoms diffusivity of about 10~14 cm2/s. Raman spectroscopy and x-ray Diffraction analysis revealed that UNCD films did not suffer graphitization nor structural damage during annealing.

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Acknowledgments

Pablo Tirado acknowledges the Consejo Nacional de Ciencia y Tecnología (CONACYT) for their financial support during this research in the group of Dr. Auciello at the University of Texas at Dallas. Prof. O. Auciello acknowledges the valuable support from the University of Texas at Dallas, through funding provided by his Distinguished Endowed Chair professor position. Dr. Yuriy Kudriavtsev (CINVESTAV-IPN) acknowledges support from CINVESTAV.

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Authors and Affiliations

  1. Departamento de Investigación en Física, Universidad de Sonora, Rosales y Luis Encinas, Hermosillo, Sonora, 83000, México

    Pablo Tirado

  2. Department of Materials Science and Engineering, University of Texas at Dallas, Richardson, TX, 75080, USA

    Pablo Tirado

  3. Department of Materials Science and Engineering, University of Texas at Dallas, Richardson, TX, 75080, USA

    Jesus J. Alcantar-Peña

  4. Facultad de Ciencia y Tecnología, Universidad Tecnológica de Panamá, Panamá, Panama

    Elida de Obaldia

  5. Department of Materials Science and Engineering, University of Texas at Dallas, Richardson, TX, 75080, USA

    Elida de Obaldia

  6. Departamento de Ingeniería Eléctrica, CINVESTAV-IPN, Ciudad de México, México

    Yuriy Kudriavtsev

  7. Departamento de Investigación en Física, Universidad de Sonora, Rosales y Luis Encinas, Hermosillo, Sonora, 83000, México

    Rafael García

  8. Department of Materials Science and Engineering, University of Texas at Dallas, Richardson, TX, 75080, USA

    Orlando Auciello

  9. Department of Bioengineering, University of Texas at Dallas, Richardson, TX, 75080, USA

    Orlando Auciello

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  1. Pablo Tirado
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  2. Jesus J. Alcantar-Peña
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  3. Elida de Obaldia
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  5. Rafael García
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  6. Orlando Auciello
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Correspondence to Orlando Auciello.

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The supplementary material for this article can be found at https://doi.org/10.1557/mrc.2018.157.

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Tirado, P., Alcantar-Peña, J.J., de Obaldia, E. et al. Boron doping of ultrananocrystalline diamond films by thermal diffusion process. MRS Communications 8, 1111–1118 (2018). https://doi.org/10.1557/mrc.2018.157

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