Figure 3.
From: Material engineering for silicon tunnel field-effect transistors: isoelectronic trap technology
(a) Schematic representation showing the idea of using intermediate states for tunneling through a pn junction. (b) Schematic atomic configuration of an Al-N pair in a host Si crystal. (c) Calculated band diagram of Si with an Al–N pair. The Al–N pair provides a discrete state in the band gap. The wave function of the discrete state at the G point is also shown.