NV centers in silicon carbide: from theoretical predictions to experimental observation

Abstract

NV centers in silicon carbide have been identified in the three main polytypes 3C, 4H, 6H by magnetic resonance and photoluminescence experiments and related ab initio calculations. Their properties show them to be promising centers for applications in quantum technology, similar to the case of NV in diamond. However, their spectral range is in the near-infrared, which should allow their integration in telecommunication systems.

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Correspondence to H. J. von Bardeleben.

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von Bardeleben, H.J., Cantin, J.L. NV centers in silicon carbide: from theoretical predictions to experimental observation. MRS Communications 7, 591–594 (2017). https://doi.org/10.1557/mrc.2017.56

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