Monolithic integration of perovskites on Ge(001) by atomic layer deposition: a case study with SrHfxTi1-xO3

MRS Communications volume 6, pages125–132(2016)Cite this article

Abstract

This work reports the growth of crystalline SrHfxTi1-xO3 (SHTO) films on Ge (001) substrates by atomic layer deposition. Samples were prepared with different Hf content x to explore if strain, from tensile (x = 0) to compressive (x = 1), affected film crystallization temperature and how composition affected properties. Amorphous films grew at 225 °C and crystallized into epitaxial layers at annealing temperatures that varied monotonically with composition from -530 °C (x= 0) to -660 °C (x= 1). Transmission electron microscopy revealed abrupt interfaces. Electrical measurements revealed 0.1 A/cm2 leakage current at 1 MV/cm for x= 0.55.

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Acknowledgments

This researchwas supportedbytheNationalScience Foundation (Award CMMI-1437050) and the Air Force Office of Scientific Research (Grant FA9550-14-1-0090).

Author information

Author notes

  1. Martin D. McDaniel

    Present address: Current Address: Towerjazz Texas, San Antonio, TX, 78251, USA

  2. Chengqing Hu

    Present address: Current Address: Intel Corporation, Chandler, AZ, 85226, USA

Affiliations

  1. Department of Chemical Engineering, The University of Texas at Austin, Austin, TX, 78712, USA

    Shen Hu & Martin D. McDaniel

  2. Department of Physics, The University of Texas at Austin, Austin, TX, 78712, USA

    Agham Posadas

  3. The University of Texas at Austin, Microelectronics Research Center, Austin, TX, 78758, USA

    Chengqing Hu

  4. Department of Physics, Arizona State University, Tempe, AZ, 85287, USA

    HsinWei Wu

  5. The University of Texas at Austin, Microelectronics Research Center, Austin, TX, 78758, USA

    Edward T. Yu

  6. Department of Physics, Arizona State University, Tempe, AZ, 85287, USA

    David J. Smith

  7. Department of Physics, The University of Texas at Austin, Austin, TX, 78712, USA

    Alexander A. Demkov

  8. Department of Chemical Engineering, The University of Texas at Austin, Austin, TX, 78712, USA

    John G. Ekerdt

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  1. Shen Hu
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Correspondence to John G. Ekerdt.

Additional information

Current Address: Towerjazz Texas, San Antonio, TX 78251, USA.

Current Address: Intel Corporation, Chandler, AZ 85226, USA.

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Supplementary Material

The supplementary material for this article can be found at http://dx.doi.org/10.1557/mrc.2016.36

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Hu, S., McDaniel, M.D., Posadas, A. et al. Monolithic integration of perovskites on Ge(001) by atomic layer deposition: a case study with SrHfxTi1-xO3. MRS Communications 6, 125–132 (2016). https://doi.org/10.1557/mrc.2016.36

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