In the present work, we are investigating the electronic transport mechanism for antimony-doped tin oxide (ATO) ultrathin films produced by a colloidal deposition process (CDP) of nanocrystals synthesized via a solvothermal route in organic medium. The ATO ultrathin films were prepared from nanoparticles containing 9 mol% of Sb and the observed electrical resistivity at room temperature was 1.55, 1.10 × 10−1, and 1.83 × 10−3 Ω cm, respectively, for the 40, 45, and 71 nm films. X-ray diffraction, transmission electron microscopy, scanning electron microscopy, and atomic force microscopy were carried out to investigate the films and electrical resistivity measurements taken in the four-probe mode with temperature ranging from −260 to 27 °C (13–300 K ± 0.1 K). Results show a good data fitting on Mott’s two-dimensional (2D) noninteracting variable range hopping for the 45 nm thin film, which is not further observed for the ATO ultrathin films obtained from CDP.
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FAPESP/CEPID 2013/07296-2 and CNPq are gratefully acknowledged.
This author was an editor of this journal during the review and decision stage. For the JMR policy on review and publication of manuscripts authored by editors, please refer to http://www.mrs.org/jmr-editor-manuscripts/.
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Conti, T.G., Chiquito, A.J. & Leite, E.R. Electrical properties of SnO2:Sb ultrathin films prepared by colloidal deposition process. Journal of Materials Research 31, 148–153 (2016). https://doi.org/10.1557/jmr.2015.387