Abstract
This study describes the elimination of threading dislocations (TDs) in GaN nanostructures. Cross-sectional transmission electron microscopy (XTEM) analysis reveals that the nominal [0001] line direction of a TD changes when it enters a GaN nanostructure and the dislocation then terminates at a sidewall facet. It is suggested that the driving force for this process is the reduction of dislocation line energy, and for a pure-edge dislocation, this TD elimination process can be accomplished simply by dislocation climb. This mechanism is active whenever a threading defect is in close proximity to a surface. Preliminary XTEM analysis of defects in AlGaN and InGaN core–shell growth onto GaN nanostructures is also shown. Although more work is required to improve the quality of core–shell InGaN epitaxial growth, nanostructures appear to offer a route to defect-free, nonpolar GaN-based devices.
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References
S.D. Hersee, X.Y. Sun, and X. Wang: The controlled growth of GaN nanowires. Nano Lett. 6, 1808 (2006).
J. Yoo, Y.-J. Hong, S.J. An, G.-C. Yi, B. Chon, T. Joo, J.-W. Kim, and J.-S. Lee: Photoluminescent characteristics of Ni-catalyzed GaN nanowires. Appl. Phys. Lett. 89, 043124 (2006).
A. Talin, F. Leonard, B.S. Swartzentruber, X. Wang, and S.D. Hersee: Unusually strong space-charge-limited current in thin wires. Phys. Rev. Lett. 101, 076802 (2008).
A.A. Talin, B.S. Swartzentruber, F. Leonard, X. Wang, and S.D. Hersee: Electrical transport in GaN nanowires grown by selective epitaxy. J. Vac. Sci. Technol. B 27, 2040 (2009).
unpublished work, paper in preparation.
K.L. Kavanagh: Misfit dislocations in nanowire heterostructures. Semicond. Sci. Technol. 25, 024006 (2010).
H.M. Kim: Nanoscale ultraviolet-light-emitting diodes using wide-bandgap gallium nitride nanorods. Adv. Mater. 15, 567 (2003).
S.D. Hersee, M.N. Fairchild, A.K. Rishinaramangalam, M. Ferdous, L. Zhang, P. Varangis, B. Swartzentruber, and A.A. Talin: GaN nanowire light emitting diodes based on templated and scalable nanowire growth process. Electron. Lett. 45, 75 (2009).
K. Kishino, A. Kikuchi, H. Sekiguchi, and S. Ishizawa: InGaN/GaN nanocolumn LEDs emitting from blue to red. SPIE Proc. 6473, 64730T (2007).
M. Ferdous, X. Wang, M.N. Fairchild, and S.D. Hersee: Effect of threading defects on InGaN/GaN multiple quantum well light emitting diodes. Appl. Phys. Lett. 91, 231107 (2007).
T. Mukai, K. Takekawa, and S. Nakamura: InGaN-based blue light-emitting diodes grown on epitaxially laterally overgrown GaN substrates. Jpn. J. Appl. Phys. 37(Part 2), L839 (1998).
S.R.J Brueck: Optical and interferometric lithography—Nanotechnology enablers. Proc. IEEE 93, 1704 (2005).
M.S. Ferdous, X.Y. Sun, X. Wang, M.N. Fairchild, and S.D. Hersee: Photoelectrochemical etching measurement of defect density in GaN grown by nanoheteroepitaxy. J. Appl. Phys. 99, 096105 (2006).
S. Tanaka, Y. Kawaguchi, N. Sawaki, M. Hibino, and K. Hiramatsu: Structural characterization of GaN laterally overgrown on a (111) Si substrate. Appl. Phys. Lett. 79, 955 (2001).
A. Béré and A. Serra: Atomic structure of dislocation cores in GaN. Phys. Rev. B 65, 205323 (2002).
J. Elsner, R. Jones, P.K. Sitch, V.D. Porezag, M. Elstner, Th. Frauenheim, M.I. Heggie, S. Öberg, and P.R. Briddon: Theory of threading edge and screw dislocations in GaN. Phys. Rev. Lett. 79, 3672 (1997).
A.M. Yong, C.B. Soh, X.H. Zhang, S.Y. Chow, and S.J. Chua: Investigation of V-defects formation in InGaN/GaN multiple quantum well grown on sapphire. Thin Solid Films 515, 4496 (2007).
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This work was supported in part by the National Science Foundation Smart Lighting Engineering Research Center (No. EEC-0812056).
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Hersee, S.D., Rishinaramangalam, A.K., Fairchild, M.N. et al. Threading defect elimination in GaN nanowires. Journal of Materials Research 26, 2293–2298 (2011). https://doi.org/10.1557/jmr.2011.112
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DOI: https://doi.org/10.1557/jmr.2011.112