As deposited amorphous and crystallized thin films of Ti 37.5% Si alloy deposited by pulsed laser ablation technique were irradiated with 100 keV Xe+ ion beam to an ion fluence of about 10 ions-cm−2. Transmission electron microscopy revealed that the implanted Xe formed amorphous nanosized clusters in both cases. The Xe ion-irradiation favors nucleation of a fcc-Ti(Si) phase in amorphous films. However, in crystalline films, irradiation leads to dissolution of the Ti5Si3 intermetallic phase. In both cases, Xe irradiation leads to the evolution of similar microstructures. Our results point to the pivotal role of nucleation in the evolution of the microstructure under the condition of ion implantation.
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The authors gratefully acknowledge the financial support of the Aeronautical Research and Development Board, India, and Japan Science and Technology to carry out this work. The authors also acknowledge Professor P.K. Das of the Department of Inorganic and Physical Chemistry, Indian Institute of Science, Bangalore, India, for extending the use of the Q-switched nanosecond pulsed laser facility for carrying out thin film deposition experiments. One of the authors (S.B.) gratefully acknowledges Japan Science and Technology for awarding the COE research fellowship. The first author (S.B.) would like to thank the Director of the Central Glass and Ceramic Research Institute, Calcutta, India, for permission to publish this work.
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Bysakh, S., Mitsuishi, K., Song, M. et al. Formation of amorphous xenon nanoclusters and microstructure evolution in pulsed laser deposited Ti62.5Si37.5 thin films during Xe ion irradiation. Journal of Materials Research 26, 62–69 (2011). https://doi.org/10.1557/jmr.2010.31