Abstract
The effect of process parameters on the plasma deposition of μc-Si:H solar cells is reviewed in this article. Several in situ diagnostics are presented, which can be used to study the process stability as an additional parameter in the deposition process. The diagnostics were used to investigate the stability of the substrate temperature during deposition at elevated power and the gas composition during deposition at decreased hydrogen dilution. Based on these investigations, an updated view on the role of the process parameters of plasma power, heater temperature, total gas flow rate, and hydrogen dilution is presented.
This is a preview of subscription content, access via your institution.








References
- 1
K. Yamamoto, M. Yoshimi, Y. Tawada, S. Fukuda, T. Sawada, T. Meguro, H. Takata, T. Suezaki, Y. Koi, K. Hayashi, T. Suzuki, M. Ichikawa A. Nakajima: Large area thin film Si module. Sol. Energy Mater. Sol. Cells 74, 449 2002
- 2
B. Rech, T. Repmann, M.N. van den Donker, M. Berginski, T. Kilper, J. Hüpkes, S. Calnan, H. Stiebig S. Wieder: Challenges in microcrystalline silicon based solar cell technology. Thin Solid Films 511–512, 548 2006
- 3
C. Smit, E.A.G. Hamers, B.A. Korevaar, R.A.C.M.M. van Swaaij M.C.M. van de Sanden: Fast deposition of microcrystalline silicon with an expanding thermal plasma. J. Non-Cryst. Solids 299–302, 98 2002
- 4
N. Kosku, F. Kurisu, M. Takegoshi, H. Takahashi S. Miyazaki: High-rate deposition of highly crystallized silicon films from inductively coupled plasma. Thin Solid Films 435, 39 2003
- 5
H. Shirai, T. Arai H. Ueyama: The generation of high-density microwave plasma and its application to large-area microcrystalline silicon thin film formation. Jpn. J. Appl. Phys. 37, L1078 1998
- 6
O. Vetterl, F. Finger, R. Carius, P. Hapke, L. Houben, O. Kluth, A. Lambertz, A. Mück, B. Rech H. Wagner: Intrinsic microcrystalline silicon: A new material for photovoltaics. Sol. Energy Mater. Sol. Cells 62, 97 2000
- 7
L. Houben, M. Luysberg, P. Hapke, R. Carius, F. Finger H. Wagner: Structural properties of microcrystalline silicon in the transition from highly crystalline to amorphous growth. Philos. Mag. A 77, 1447 1998
- 8
Y. Mai, S. Klein, R. Carius, J. Wolff, A. Lambertz, F. Finger X. Geng: Microcrystalline silicon solar cells deposited at high rates. J. Appl. Phys. 97, 114913 2005
- 9
B. Rech, T. Roschek, T. Repmann, J. Müller, R. Schmitz W. Appenzeller: Microcrystalline silicon for large area thin film solar cells. Thin Solid Films 427, 157 2003
- 10
M. Kondo, M. Fukawa, L. Guo A. Matsuda: High rate growth of microcrystalline silicon at low temperatures. J. Non-Cryst. Solids 266–269, 84 2000
- 11
T. Roschek, B. Rech, J. Müller, R. Schmitz H. Wagner: Influence of the total gas flow on the deposition of microcrystalline silicon solar cells. Thin Solid Films 451–452, 466 2004
- 12
T. Roschek, T. Repmann, J. Müller, B. Rech H. Wagner: Comprehensive study of microcrystalline silicon solar cells deposited at high rate using 13.56 MHz plasma-enhanced chemical vapor deposition. J. Vac. Sci. Technol. A 20, 492 2002
- 13
L. Sansonnens, A. Pletzer, D. Magni, A.A. Howling, Ch. Hollenstein, J.P.M. Schmitt: A voltage uniformity study in large-area reactors for RF plasma deposition. Plasma Sources Sci. Technol. 6, 170 1997
- 14
V.A. Lisovskiy V.D. Yegorenkov: Rf breakdown of low-pressure gas and a novel method for determination of electron-drift velocities in gases. J. Phys. D Appl. Phys. 31, 3349 1998
- 15
O. Kluth, B. Rech, L. Houben, S. Wieder, G. Schöpe, C. Beneking, H. Wagner, A. Löffl H.W. Schock: Texture etched ZnO:Al coated glass substrates for silicon based thin film solar cells. Thin Solid Films 351, 247 1999
- 16
O. Kluth, G. Schöpe, J. Hüpkes, C. Agashe, J. Müller B. Rech: Modified Thornton model for magnetron sputtered zinc oxide: Film structure and etching behaviour. Thin Solid Films 442, 80 2003
- 17
M.N. van den Donker, R. Schmitz, W. Appenzeller, B. Rech, W.M.M. Kessels M.C.M. van de Sanden: The role of plasma induced substrate heating during high-rate deposition of microcrystalline silicon solar cells. Thin Solid Films 511–512, 562 2006
- 18
M.N. van den Donker, B. Rech, F. Finger, W.M.M. Kessels M.C.M. van de Sanden: Highly efficient microcrystalline silicon solar cells deposited from a pure SiH4 flow. Appl. Phys. Lett. 87, 263503 2005
- 19
L. Feitknecht, J. Meier, P. Torres, J. Zürcher A. Shah: Plasma deposition of thin film silicon: Kinetics monitored by optical emission spectroscopy. Sol. Energy Mater. Sol. Cells 74, 539 2002
- 20
B. Strahm, A.A. Howling, L. Sansonnens, Ch. Hollenstein, U. Kroll, J. Meier, Ch. Ellert, L. Feitknecht C. Ballif: Microcrystalline silicon deposited at high rate on large areas from pure silane with efficient gas utilization. Sol. Energy Mater. Sol. Cells 91, 495 2007
ACKNOWLEDGMENTS
The authors kindly thank W. Appenzeller, F. Birmans, R. Carius, A. Gordijn, M. Hülsbeck, D. Grunsky, Y. Mai, and S. Reynolds for fruitful discussions and experimental support. Helianthos BV is acknowledged for financial support. The research of W.M.M. Kessels was made possible through a fellowship of the Royal Netherlands Academy of Arts and Sciences (KNAW).
Author information
Affiliations
Corresponding author
Rights and permissions
About this article
Cite this article
van den Donker, M., Rech, B., Schmitz, R. et al. Hidden parameters in the plasma deposition of microcrystalline silicon solar cells. Journal of Materials Research 22, 1767–1774 (2007). https://doi.org/10.1557/jmr.2007.0226
Received:
Accepted:
Published:
Issue Date: