Fig. 4: | MRS Internet Journal of Nitride Semiconductor Research

Fig. 4:

From: Fermi Level Pinning at GaN-interfaces: Correlation of electrical admittance and transient spectroscopy

Fig. 4:

(Left) Arrhenius plots of deep defects in n-type GaN layers obtained by HF-DLTS, LF-DLTS and TAS. (Right) Arrhenius plots of three deep defect levels obtained by the spectroscopical methods DLTS, TAS and low frequency DLTS in a GaAs:Te sample with an electron concentration of 2×1015 cm−3. The activation energies of the deep traps are: G1: 350±30 meV; G2: 670±40 meV and G3: 740±50 meV, respectively.

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