Fig. 2: | MRS Internet Journal of Nitride Semiconductor Research

Fig. 2:

From: Fermi Level Pinning at GaN-interfaces: Correlation of electrical admittance and transient spectroscopy

Fig. 2:

(Left) TAS spectra of different GaN samples grown by MOVPE (#1 and #2) and by MBE (#3 and #4), respectively, at a modulation frequency of 10kHz and under zero bias condition. The resulting activation energies are 130-140meV for T1 and 150-170meV for T2, respectively. (Right) DLTS-spectra of the MBE samples #3 and #4 at 100kHz (LF-DLTS) and at 1MHz (HF-DLTS). The corresponding emission rates are en = 36.1 s−1 for the HF-DLTS spectrum and en = 0.4 s−1 for the LF-DLTS, respectively.

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