Figure 2 | MRS Internet Journal of Nitride Semiconductor Research

Figure 2

From: Structural and Electronic Properties of Line Defects in GaN

Figure 2

Left: High resolution Z-contrast image along [0001] of a nanopipe. Y. Xin unpublished. Right: Suggested mechanism for the formation of a nanopipe (area No. 0). Three hexagons (No. 1,2,3) are growing together. As the surface to bulk ratio at edges (No. 4,5,6) is very large, they grow out quickly leaving a nanopipe (area No. 0) with {10−10} type facets.

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