Figure 1 | MRS Internet Journal of Nitride Semiconductor Research

Figure 1

From: Structural and Electronic Properties of Line Defects in GaN

Figure 1

Left: Top view (in [0001] ) of the relaxed core of the open-core screw dislocation. The three fold coordinated atoms 1 (Ga) and 2 (N) adopt a hybridisation similar to the (10−10) surface atoms. Right: TEM image of a nanopipe containing a dislocation with a screw component. During growth the nanopipe closes leaving the dislocation with an opening of three rows (approx. 8 Å) wide. Z. Liliental-Weber [11].

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