Fig. 3 | MRS Internet Journal of Nitride Semiconductor Research

Fig. 3

From: Structural Properties of Laterally Overgrown GaN

Fig. 3

A cross-sectional TEM picture of the HVPE ELO GaN film. The change in the direction of the TDs is observable in the picture. The insert is an electron diffraction pattern in the same area. Two sets of diffraction spots indicate that there is a lattice tilt in the ELO area due to pileup of TDs.

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