Fig. 1
Cross-sectional SEM picture of a coalesced flat-top ELO GaN sample grown by HVPE. There is no void observed at the coalescence interface.
Fig. 1 | MRS Internet Journal of Nitride Semiconductor Research
Cross-sectional SEM picture of a coalesced flat-top ELO GaN sample grown by HVPE. There is no void observed at the coalescence interface.