Fig. 1(a)
From: Base Transit Time in Abrupt GaN/InGaN/GaN and AlGaN/GaN/AlGaN HBTs
Low field mobility μn and diffusion coefficient Dn for In0.2Ga0.8N and GaN as a function of temperature at a doping concentration of1019 cm−3. Solid triangles represent Dn and μn for GaN