Figure 3.
From: Epitaxial Lateral Overgrowth of GaN on SiC and Sapphire Substrates
(a) Panchromatic CL image of a GaN/ELO surface. Light emission is more intense over insulator areas. Window CL is dominated by deep-level emission (b) whereas, near the center of the ELO stripes, the CL is primarily near bandedge emission (c).