Figure 5
(upper) XTEM micrographs of the GaN grown at 600 °C for 1 hour with different TGa, (a) 870, (b) 900 and (c) 950 °C.
Figure 5 | MRS Internet Journal of Nitride Semiconductor Research
(upper) XTEM micrographs of the GaN grown at 600 °C for 1 hour with different TGa, (a) 870, (b) 900 and (c) 950 °C.