Figure 2
HRXTEM micrographs of Si substrates carbonized at 950 °C under a fixed C2H2 pressure of 5 × 10−6 Torr after annealing for (a) 1 and (b) 3 min.
Figure 2 | MRS Internet Journal of Nitride Semiconductor Research
HRXTEM micrographs of Si substrates carbonized at 950 °C under a fixed C2H2 pressure of 5 × 10−6 Torr after annealing for (a) 1 and (b) 3 min.