Figure 6.
From: Luminescence of Be-doped GaN layers grown by molecular beam epitaxy on Si (111)
Low temperature PL decays of FXA and DAP emissions.
Figure 6. | MRS Internet Journal of Nitride Semiconductor Research
From: Luminescence of Be-doped GaN layers grown by molecular beam epitaxy on Si (111)
Low temperature PL decays of FXA and DAP emissions.