Figure 5.
From: Luminescence of Be-doped GaN layers grown by molecular beam epitaxy on Si (111)
Evolution of PL spectra with increasing excitation power at T = 4K.
Figure 5. | MRS Internet Journal of Nitride Semiconductor Research
From: Luminescence of Be-doped GaN layers grown by molecular beam epitaxy on Si (111)
Evolution of PL spectra with increasing excitation power at T = 4K.