Figure 3. | MRS Internet Journal of Nitride Semiconductor Research

Figure 3.

From: Surface Reconstruction during Molecular Beam Epitaxial Growth of GaN (0001)

Figure 3.

RHEED patterns of GaN(0001) surface with electron beam along the \(\left( {11\bar 20} \right)\) direction. (a) Ga flux of 7.5×1014 cm−2s−1 (effusion cell temperature of 1095° C), (b) initial pattern with Ga flux of 6.3×1014 cm−2s−1 (effusion cell temperature of 1085° C), (c) same flux as (b) but after waiting several minutes, and (d) same surface as (a) but after reducing Ga flux to zero.

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