Figure 2. | MRS Internet Journal of Nitride Semiconductor Research

Figure 2.

From: Surface Reconstruction during Molecular Beam Epitaxial Growth of GaN (0001)

Figure 2.

Cross-sectional TEM image of a GaN film, consisting of ≈ 160 nm of MBE-grown material (as estimated from stylus profilometry measurements) on a 1 μm thick MOCVD-grown layer. An interface between the MBE and MOCVD layers can be very faintly seen, located 190 nm below the surface; generally this interface between the layers appears to be epitaxial and continuous. The apparent large surface pit seen on the left hand side of the image is due to the specimen thinning used in TEM sample preparation.

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