Figure 1.
From: Surface Reconstruction during Molecular Beam Epitaxial Growth of GaN (0001)
5 μ m × 5 μm AFM image of the surface morphology of a (0001) oriented GaN film (Ga-face). The MBE film, grown at 750° C, is about 0.7 μm thick, and was grown on top of a 1 μm thick MOCVD-grown GaN film on sapphire. The grey-scale of the image ranges from 0 (black) to 24 nm (white).