Abstract
In this paper, we explore the use of nanoindentation techniques as a method of measuring equivalent stress-strain curves of the PECVD SiOx thin films. Three indenter tips with different geometries were adopted in our experiments, enabling us to probe different regimes of plastic deformation in the PECVD SiOx thin films. A shear transformation zone (STZ) based amorphous plasticity theory is applied to depict the underlying plastic deformation mechanism.
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Cao, Z., Zhang, X. Measurement of Stress-strain Curves of PECVD Silicon Oxide Thin Films by Means of Nanoindentation. MRS Online Proceedings Library 977, 423 (2006). https://doi.org/10.1557/PROC-977-0977-FF04-23
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DOI: https://doi.org/10.1557/PROC-977-0977-FF04-23