Heteroepitaxy of GaAs on Si by MOCVD

MRS Online Proceedings Library volume 91, pages69–72(1987)Cite this article

Abstract

The stress and strain of GaAs on Si grown by using strained superlattice intermediate layers and a two-step growth method are characterized by the photoluminescence, X-ray diffraction and the curvature radius. The strain of GaAs grown using strained superlattice intermediate layers is smaller than that grown by the two-step growth method.

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Author notes

  1. Toru Imori

    Present address: Central Research Laboratories, Nippon Mining Company, LTD, 17-35, Niizo-Minami, 3-Chome, Saitama 335, Toda-shi, Japan

Affiliations

  1. Department of Electrical and Computer Engineering, Nagoya Institute of Technology, Nagoya 466, Gokiso-cho, Showa-ku, Japan

    Tetsuo Soga, Toru Imori & Masayoshi Umeno

Authors
  1. Tetsuo Soga
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  2. Toru Imori
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  3. Masayoshi Umeno
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Correspondence to Tetsuo Soga.

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Soga, T., Imori, T. & Umeno, M. Heteroepitaxy of GaAs on Si by MOCVD. MRS Online Proceedings Library 91, 69–72 (1987). https://doi.org/10.1557/PROC-91-69

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