Abstract
The stress and strain of GaAs on Si grown by using strained superlattice intermediate layers and a two-step growth method are characterized by the photoluminescence, X-ray diffraction and the curvature radius. The strain of GaAs grown using strained superlattice intermediate layers is smaller than that grown by the two-step growth method.
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Soga, T., Imori, T. & Umeno, M. Heteroepitaxy of GaAs on Si by MOCVD. MRS Online Proceedings Library 91, 69–72 (1987). https://doi.org/10.1557/PROC-91-69
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DOI: https://doi.org/10.1557/PROC-91-69