In recent papers, we have described a depth profiling method using chemical beveling and Auger line scan measurement, quick and easy to perform, with a sufficient resolution to check the abruptness of chemical interfaces obtained in epitaxial growth of III-V compounds.
The variation law of chemical species concentrations at the interfaces is tighly related to the mecanisms of initial growth. We present here a theoretical analysis applied to chemically beveled interfaces with sharply graded concentrations.
We show on two examples of LP-MOCVD quantum wells (InP/GaInAs/InP and GaInP/GaAs/GaInP) the good agreement between experimental and theoretical curves, assuming exponentially varying concentrations. Finally, we discuss the correlations with the dynamics of the first steps of the LP-MOCVD growth.
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Olivier, J., Etienne, P., Razeghi, M. et al. Characterisation Of Quantum Wells By Auger Analysis On Chemical Bevels. MRS Online Proceedings Library 91, 497–502 (1987). https://doi.org/10.1557/PROC-91-497