Skip to main content
Log in

Formation of Epitaxial NiSi2 and CoSi2 On Laterally Confined (111)Si

  • Published:
MRS Online Proceedings Library Aims and scope

Abstract

Epitaxial NiSi2 of single orientation was grown on laterally confined (111)Si. Striking oxide opening size effects on the growth of NiSi2 epitaxy were observed. The formation temperature of NiSi2 on (111)Si was found to be as low as 550°C inside oxide openings 1.8 μm or smaller in size. Epitaxial NiSi2 of single orientation which is identical to that of (111)Si substrate was formed inside oxide openings of or smaller than 1.8, 1, and 0.8 μm in size in samples annealed at 550-750, 800, and 850-900°C, respectively. Preliminary results on the epitaxial growth of CoSi2 are also reported.

This is a preview of subscription content, log in via an institution to check access.

Access this article

Price excludes VAT (USA)
Tax calculation will be finalised during checkout.

Instant access to the full article PDF.

Institutional subscriptions

Similar content being viewed by others

References

  1. S. Saitoh, H. Ishiwara, and S. Furukawa, Appl. Phys. Lett. 37, 223 (1980).

    Article  Google Scholar 

  2. R.T. Tung, Phys. Rev. Lett. 52, 461 (1984).

    Article  CAS  Google Scholar 

  3. M. Liehr, P.E. Schmid, F.K. LeGouses, and P.S. Ho, Phys. Rev. Lett. 54, 2139 (1985).

    Article  CAS  Google Scholar 

  4. R.T. Tung, A.F.J. Levi, and J.M. Gibson, Appl. Phys, Lett. 48, 635 (1986).

    CAS  Google Scholar 

  5. L.J. Chen, H.C. Cheng, and W.T. Lin, Mater, Res, Soc. Symp. Proc. 54, 245 (1986).

    Article  CAS  Google Scholar 

  6. M.A. Nicolet and S.S. Lau, in Materials and Process Characterization, edited by N.G. Einspruch and G.B. Larrabee (Academic, New York, 1983), p. 329.

  7. K.N. Tu, E.I. Alessandrini, W.K. Chu, H. Krautle, and J.W. Mayer, Jpn. J. Appl. Phys. 2, Suppl. 2–1, 669 (1974).

  8. K.C.R. Chiu, J.M. Poate, J.E. Howe, T.T, Sheng, and A.G. Cullis, Appl. Phys. Lett. 38, 988 (1981).

    Article  CAS  Google Scholar 

  9. L.J. Chen, J.’W. Mayer, and K.N. Tu, Thin Solid Films 93, 135 (1982).

    Article  CAS  Google Scholar 

  10. R.T. Tung, J.M. Gibson, and J.M. Poate, Phys. Rev. Lett. 50, 429 (1983).

    Article  CAS  Google Scholar 

  11. R.T. Tung, J.M. Gibson, D.C. Jacobson, and J.M. Poate, Appl. Phys, Lett. 43, 476 (1983).

    CAS  Google Scholar 

  12. H.C. Cheng, I.C. Wu, and L.J. Chen, Appl. Phys. Lett, 50, 174 (1987).

    Article  CAS  Google Scholar 

  13. L.J. Chen and T.T. Chang, Thin Solid Films, 104, 183 (1983).

    Article  CAS  Google Scholar 

  14. P. Townsend (unpublished work).

  15. F.M. d’Heurle and P. Gas, J, Mater. Res. 1, 205 (1986).

    Article  Google Scholar 

  16. L.J. Chen and C.Y. Hou, Chinese J. Mater. Sci, 15–1, 1 (1983).

Download references

Author information

Authors and Affiliations

Authors

Rights and permissions

Reprints and permissions

About this article

Cite this article

Chang, C.S., Nieh, C.W. & Chen, L.J. Formation of Epitaxial NiSi2 and CoSi2 On Laterally Confined (111)Si. MRS Online Proceedings Library 91, 485–490 (1987). https://doi.org/10.1557/PROC-91-485

Download citation

  • Published:

  • Issue Date:

  • DOI: https://doi.org/10.1557/PROC-91-485

Navigation