Temperature Dependence Of The Electrical Properties Of Epitaxial Caf2 Layers On Si(111) Summary Abstract

Abstract

CaF2 is an insulator with a number of attractive properties for epitaxial growth on Si1 Epitaxial CaF2 layers have been grown on Si(111) by Molecular Beam Epitaxy and are found to have smooth surfaces and a high degree of crystalline perfection.1 For applications such as a gate insulator in metal-insulator-semiconductor field-effect transistors or in silicon-on-insulator technology, the electrical properties of these layers are also critical.

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References

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    L.J. Schowalter, R.W. Fathauer, R.P. Goehner, L.G. Turner, R.W. DeBlois, S. Hashimoto, J.-L. Peng, W.M. Gibson, and J.P. Krusius, J. Appl. Phys. 58, 302 (1985).

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Correspondence to R. W. Fathauer.

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Fathauer, R.W., Schowalter, L.J. Temperature Dependence Of The Electrical Properties Of Epitaxial Caf2 Layers On Si(111) Summary Abstract. MRS Online Proceedings Library 91, 371–373 (1987). https://doi.org/10.1557/PROC-91-371

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