CaF2 is an insulator with a number of attractive properties for epitaxial growth on Si1 Epitaxial CaF2 layers have been grown on Si(111) by Molecular Beam Epitaxy and are found to have smooth surfaces and a high degree of crystalline perfection.1 For applications such as a gate insulator in metal-insulator-semiconductor field-effect transistors or in silicon-on-insulator technology, the electrical properties of these layers are also critical.
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L.J. Schowalter, R.W. Fathauer, R.P. Goehner, L.G. Turner, R.W. DeBlois, S. Hashimoto, J.-L. Peng, W.M. Gibson, and J.P. Krusius, J. Appl. Phys. 58, 302 (1985).
R.W. Fathauer and L.J. Schowalter, to be published in J. Electronic Materials (May, 1987).
T.P. Smith, III, J.M. Phillips, R. People, J.M. Gibson, L Pfeiffer, and P.J. Stiles, in Materials Research Society Symposia Proceedings, Vol. 54, ed. by R.J. Nemanich, P.S. Ho, and S.S. Lau (Materials Research Society, Pittsburgh, 1986), pp. 295–305.
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Fathauer, R.W., Schowalter, L.J. Temperature Dependence Of The Electrical Properties Of Epitaxial Caf2 Layers On Si(111) Summary Abstract. MRS Online Proceedings Library 91, 371–373 (1987). https://doi.org/10.1557/PROC-91-371