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Optical Properties of Ordered Ge-Si Atomic-Layer Superlattices

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Abstract

A systematic study of the band-to-band optical transitions in commensurate strainedlayer superlattices of Ge and Si grown on (001) Si substrates show the presence of new electronic energy bands. Our measurements suggest that superlattice structure on the same scale as the unit cell results in a band structure significantly different from that of a random alloy.

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Authors and Affiliations

  1. AT&T Bell Laboratories, 600 Mountain Avenue, 07974, Murray Hill, NJ, USA

    T. P. Pearsall, J. Bevk, J. C. Bean, J. M. Bonar & J. P. Mannaerts

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  1. T. P. Pearsall
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  2. J. Bevk
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  3. J. C. Bean
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  4. J. M. Bonar
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  5. J. P. Mannaerts
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Pearsall, T.P., Bevk, J., Bean, J.C. et al. Optical Properties of Ordered Ge-Si Atomic-Layer Superlattices. MRS Online Proceedings Library 91, 287–292 (1987). https://doi.org/10.1557/PROC-91-287

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  • DOI: https://doi.org/10.1557/PROC-91-287

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