Optical Properties of Ordered Ge-Si Atomic-Layer Superlattices

Abstract

A systematic study of the band-to-band optical transitions in commensurate strainedlayer superlattices of Ge and Si grown on (001) Si substrates show the presence of new electronic energy bands. Our measurements suggest that superlattice structure on the same scale as the unit cell results in a band structure significantly different from that of a random alloy.

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Correspondence to T. P. Pearsall.

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Pearsall, T.P., Bevk, J., Bean, J.C. et al. Optical Properties of Ordered Ge-Si Atomic-Layer Superlattices. MRS Online Proceedings Library 91, 287–292 (1987). https://doi.org/10.1557/PROC-91-287

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