GexSi1−x/Si Heterostructures: Physics and Device Applications

MRS Online Proceedings Library volume 91, pages269–276(1987)Cite this article

Abstract

Work on GexSi1−x strained layer epitaxy is reviewed including: The limits of single layer and superlattice growth, and comparison with theory; Physical properties including bandgap and heterostructure band alignment; Work on non-random alloys; Device applications including MODFET’s, PIN and APD photodetectors.

This is a preview of subscription content, access via your institution.

Access options

Buy single article

Instant access to the full article PDF.

US$ 39.95

Tax calculation will be finalised during checkout.

References

  1. [1]

    S. Gonda, Y. Matsushima, S. Mukai, Y. Makita and O. Igarashi, Jpn. J. Appl. Phys. 17, 1043 (1978).

    CAS  Article  Google Scholar 

  2. [2]

    H. Kawanami, T. Sakamoto, T. Takahashi, E. Suzuki, and K. Nagai, Jpn. J. Appl. Phys. 21, L68 (1982).

  3. [3]

    H. Kroemer, K. J. Polasko, and S. C. Wright, Appl. Phys. Lett. 36, 763 (1980).

    CAS  Article  Google Scholar 

  4. [4]

    S. L. Wright, M. Inada and H. Kroemer, J. Vac. Sci. Technol. 21, 534 (1982).

    CAS  Article  Google Scholar 

  5. [5]

    S. L. Wright, H. Kroemer and M. Inada, J. Appl. Phys. 55, 2916 (1984).

    CAS  Article  Google Scholar 

  6. [6]

    S. L. Wright and H. Kroemer, Appl. Phys. Lett. 36, 210 (1980).

    CAS  Article  Google Scholar 

  7. [7]

    T. de Jong, W. A. S. Douma, J. F. van der Veen and F. W. Saris, Appl. Phys. Lett. 42, 1037 (1983).

    Article  Google Scholar 

  8. [8]

    T. de Jong, F. W. Saris, Y. Tamminga and J. Haisma, Appl. Phys. lett. 44, 445 (1984).

    Article  Google Scholar 

  9. [9]

    T. de Jong, Ph.D. Thesis, FOM Institute for Atomic and Molecular Physics, Kruislaan 407, Amsterdam, The Netherlands.

  10. [10]

    J. C. Bean, T. T. Sheng, L. C. Feldman, A. T. Fiory and R. T. Lynch, Appl. Phys. Lett. 44, 102 (1984).

    CAS  Article  Google Scholar 

  11. [11]

    J. C. Bean, L. C. Feldman, A. T. Fiory, S. Nakahara and I. K. Robinson, J. Vac. Sci. Technol. A2, 436 (1984).

  12. [12]

    A. T. Fiory, J. C. Bean, L. C. Feldman and I. K. Robinson, J. Appl. Phys. 56, 1227 (1984).

    CAS  Article  Google Scholar 

  13. [13]

    U.S. Patent 4,529,455.

  14. [14]

    F. C. Frank and J. H. van der Merwe, Proc. Roy. Soc. A198, 205 (1949).

  15. [15]

    F. C. Frank and J. H. van der Merwe, Proc. Roy. Soc. A198, 216 (1949).

  16. [16]

    F. C. Frank and J. H. van der Merwe, Proc. Roy, Soc. A200, 125 (1949).

  17. [17]

    J. H. van der Merwe, Proc. Phys. Soc. (London) A63, 616 (1950).

  18. [18]

    For an introduction to the field see J. W. Matthews, J. Vac. Sci. Technol. 12, 126 (1975).

    CAS  Article  Google Scholar 

  19. [19]

    For an overview of the field see articles in Epitaxial Growth, J. W. Matthews Ed., Academic Press, New York (1975).

  20. [20]

    E. Kasper, H. J. Herzog and H. Kibbel, Appl. Phys. 8, 199 (1975).

    CAS  Article  Google Scholar 

  21. [21]

    E. Kasper and H. J. Herzog, Thin Sol. Films 44, 357 (1977).

    CAS  Article  Google Scholar 

  22. [22]

    E. Kasper and W. Pabst, Thin Solid Films 37, L5 (1976).

  23. [23]

    First presented at the 1982 Electronic Materials Conference, Fort Collins, Colo. and published in M. M. Manasevit, I. S. Gergis, and A. B. Jones, Appl. Phys. Lett. 41, 464 (1982).

    CAS  Article  Google Scholar 

  24. [24]

    A. T. Fiory, J. C. Bean, R. Hull and S. Nakahara, Phys. Rev. B31, 4063 (1985).

  25. [25]

    J. C. Bean, A. T. Fiory, R. Hull and R. T. Lynch, p. 385, Proc. 1st Int. Symp. on Si MBE, J. C. Bean Ed., Electrochemical Soc., Pennington, NJ (1985).

  26. [26]

    R. People and J. C. Bean, Appl. Phys. Lett. 47, 322 (1985).

    CAS  Article  Google Scholar 

  27. [27]

    M. H. Grabow and G. H. Gilmer, in “Semiconductor Heterostructures,” M. L. Green, J. E. E. Baglin, G. Y. Chin, H. W. Deckman, W. Mayo and D. Narasinham, Eds., Metallurgical Soc., Warrendale, PA, 3 (1986).

  28. [28]

    B. W. Dodson and P. A. Taylor, Appl. Phys. Lett. 49, 642 (1986).

    CAS  Article  Google Scholar 

  29. [29]

    H. Jorke, H. J. Herzog, E. Kasper and H. Kibbel, J. Cryst. Growth 81, 428 (1987).

    Article  Google Scholar 

  30. [30]

    D. C. Houghton, D. J. Lockwood, M. W. C. Dharma-Wardana, E. W. Fenton, J. M. Baribeau and M. W. Denhoff, J. Cryst. Growth 81, 434 (1987).

    CAS  Article  Google Scholar 

  31. [31]

    R. Hull, J. C. Bean, A. T. Fiory, J. M. Gibson and N. E. Hartsough, p. 376, Proc. 1st Int. Symp. on Si MBE, J. C. Bean Ed., Electrochemical Soc., Pennington, NJ (1985).

  32. [32]

    R. Hull, J. C. Bean, F. Cerdeira, A. T. Fiory and J. M. Gibson, Appl. Phys. Lett. 48, 56 (1986).

    CAS  Article  Google Scholar 

  33. [33]

    R. Braunstein, A. R. Moore and R. Herman, Phys. Rev. 109, 694 (1958).

    Article  Google Scholar 

  34. [34]

    J. S. Kline, F. H. Pollack and M. Cardona, Helv-Phys. Acta 41, 968 (1968).

    CAS  Google Scholar 

  35. [35]

    W. H. Kleiner and L. M. Roth, Phys. Rev. Lett. 2, 334 (1959).

    CAS  Article  Google Scholar 

  36. [36]

    R. People, Phys. Rev. B32, 1405 (1985).

  37. [37]

    D. V. Lang, R. People, J. C. Bean and A. M. Sergent, Appl. Phys. Lett. 47, 1333 (1985).

    CAS  Article  Google Scholar 

  38. [38]

    D. V. Lang, R. People, J. C. Bean and A. M. Sergent, p. 359, Layered Structures and Epitaxy, J. M. Gibson, G. C. Osbourn and R. M. Tromp, Eds., Vol. 56, Mat. Res. Soc., Pittsburgh, PA (1986).

  39. [39]

    W. A. Harrison, J. Vac. Sci. Technol. 14, 1016 (1977).

    Article  Google Scholar 

  40. [40]

    A. D. Katnani, N. G. Stoffel, D. R. Daniels, Te-Yiu Zhao and G. Margaritondo, J. Vac. Sci. Technol. A1, 692 (1983).

  41. [41]

    M. Maenpaa, T. F. Kuech and M. -A. Nicolet, S. S. Lau and D. K. Sadana, J. Appl. Phys. 53, 1076 (1982).

    CAS  Article  Google Scholar 

  42. [42]

    R. People, J. C. Bean, D. V. Lang, A. M. Sergent, H. L. Stormer, K. W. Wecht, R. T. Lynch and K. Baldwin, Appl. Phys. Lett. 45, 1231 (1984).

    CAS  Article  Google Scholar 

  43. [43]

    R. People, J. C. Bean and D. V. Lang, J. Vac. Sci. Technol. A3, 846 (1985).

  44. [44]

    R. People, J. C. Bean and D. V. Lang, p. 360, Proc. 1st Int. Symp. on Si MBE, J. C. Bean Ed., Electrochemical Soc., Pennington, NJ (1985).

  45. [45]

    H. Jorke and H. -J. Herzog, p. 352, Ibid.

  46. [46]

    G. Abstreiter, H. Brugger, T. Wolf, H. Jorke and H. -J. Herzog, Phys. Rev. Lett. 54, 2441 (1985).

    CAS  Article  Google Scholar 

  47. [47]

    R. People and J. C. Bean, Appl. Phys. Lett. 48, 538 (1986).

    CAS  Article  Google Scholar 

  48. [48]

    R. People, J. C. Bean and D. V. Lang, p. 767, Proc. 18th Int. Conf. On The Physics of Semiconductors, Stockholm (1986), World Scientific, Singapore (1987).

  49. [49]

    A. Ourmazd and J. C. Bean, Phys. Rev. B55, 765 (1985).

  50. [50]

    A. Ourmazd and J. C. Bean, p. 377, Layered Structures and Epitaxy, J. M. Gibson, G. C. Osbourn and R. M. Tromp, Eds., Vol. 56, Mat. Res. Soc., Pittsburgh, PA (1986).

  51. [51]

    W. Lowe and J. C. Bean, Amer. Phys. Soc. Mtg., Las Vegas, March, 1986.

  52. [52]

    Y. H. Xie, R. People, J. C. Bean and K. W. Wecht, Appl. Phys. Lett. 49, 283 (1986).

    CAS  Article  Google Scholar 

  53. [53]

    Y. H. Xie, R. People, J. C. Bean and K. W. Wecht, J. Vac. Sci. Technol., to be published.

  54. [54]

    D. J. Lockwood, K. Rajan, E. W. Fenton, J. M. Barbeau and M. W. Denhoff, Sol. St. Comm. 61, 465 (1987).

    CAS  Article  Google Scholar 

  55. [55]

    J. Bevk, J. P. Mannaerts, L. C. Feldman, B. A. Davidson and A. Ourmazd, Appl. Phys. Lett. 49, 286 (1986).

    CAS  Article  Google Scholar 

  56. [56]

    J. Bevk, J. P. Mannaerts, L. C. Feldman, B. A. Davidson, W. P. Lowe, A. M. Glass, T. P. Pearsall, J. Menendez, A. Pinczuk and A. Ourmazd, p. 189, Heteroepitaxy on Silicon, J. C. C. Fan and J. M. Poate, Mat. Res. Soc., Pittsburgh, PA, (1986).

  57. [57]

    T. P. Pearsall, J. Bevk, L. C. Feldman, J. M. Bonar, J. P. Mannaerts and A. Ourmazd, Phys. Rev. Lett. 58, 729 (1987).

    CAS  Article  Google Scholar 

  58. [58]

    J. Bevk, A. Ourmazd, L. C. Feldman, T. P. Pearsall, J. M. Bonar, B. A. Davidson and J. P. Mannaerts, Appl. Phys. Lett. 50, 760 (1987).

    CAS  Article  Google Scholar 

  59. [59]

    T. P. Pearsall, J. C. Bean, R. People and A. T. Fiory, p. 402, Proc. 1st Int. Symp. on Si MBE, J. C. Bean Ed., Electrochemical Soc., Pennington, NJ (1985).

  60. [60]

    T. P. Pearsall and J. C. Bean, IEEE Elec. Dev. Lett., EDL-7, 308 (1986).

  61. [61]

    H. Daembkes, H. -J. Herzog, H. Jorke, H. Kibbel and E. Kasper, IEEE Trans, on Elec. Dev. ED-33, 633 (1986).

  62. [62]

    H. Temkin, T. P. Pearsall, J. C. Bean, R. A. Logan and S. Luryi, Appl. Phys. Lett. 48, 963 (1986).

    CAS  Article  Google Scholar 

  63. [63]

    S. Luryi, T. P. Pearsall, H. Temkin and J. C. Bean, Elec. Dev. Lett. EDL-7, 104 (1986).

  64. [64]

    T. P. Pearsall, H. Temkin, J. C. Bean and S. Luryi, IEEE Elec. Dev. Lett. EDL-7, 330 (1986).

  65. [65]

    H. Temkin, A. Antreasyan, N. A. Olsson, T. P. Pearsall and J. C. Bean, Appl. Phys. Lett. 49, 809–11 (1986).

Download references

Author information

Affiliations

  1. AT&T Bell Laboratories, 07974, Murray Hill, New Jersey, USA

    John C. Bean

Authors
  1. John C. Bean
    View author publications

    You can also search for this author in PubMed Google Scholar

Corresponding author

Correspondence to John C. Bean.

Rights and permissions

Reprints and Permissions

About this article

Cite this article

Bean, J.C. GexSi1−x/Si Heterostructures: Physics and Device Applications. MRS Online Proceedings Library 91, 269–276 (1987). https://doi.org/10.1557/PROC-91-269

Download citation