GexSi1−x/Si Heterostructures: Physics and Device Applications

Abstract

Work on GexSi1−x strained layer epitaxy is reviewed including: The limits of single layer and superlattice growth, and comparison with theory; Physical properties including bandgap and heterostructure band alignment; Work on non-random alloys; Device applications including MODFET’s, PIN and APD photodetectors.

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Bean, J.C. GexSi1−x/Si Heterostructures: Physics and Device Applications. MRS Online Proceedings Library 91, 269–276 (1987). https://doi.org/10.1557/PROC-91-269

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