Prospects for Monolithic GaAs/Si Integration

Abstract

The status of monolithic GaAs/Si (MGS) integration is reviewed and its future prospects are discussed. The MGS material now available is satisfactory for majority-carrier devices, but improvement in quality is needed for minority-carrier devices. By using a suitable sequence of processing steps, fabrication of GaAs MESFETs and Si MOSFETs on the same wafer and monolithic integration of GaAs/AlGaAs double-heterostructure LEDs and Si MOSFETs have been achieved. The GaAs and Si FETs show characteristics comparable to those for devices fabricated on separate GaAs and Si substrates. The LEDs have been modulated up to 27 Mb/s by applying a pattern of voltage pulses to the MOSFET gate. Two promising applications of MGS integration are optical interconnects between Si VLSI chips and monolithic microwave integrated circuits. Much better performance should be obtained by operating MGS ICs at liquid nitrogen temperature.

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References

  1. 1.

    H. Shichijo, L. T. Tran, R. J. Matyi, and J. W. Lee, Proceedings of this conference.

  2. 2.

    T. Soga, S. Hattori, S. Sakai, M. Takeyasu, and M. Umeno, Electron. Lett. 20, 917 (1984).

    Article  Google Scholar 

  3. 3.

    J. W. Lee, 13th Int. Sym. GaAs and Related Compounds, paper H-7, Las Vegas, Nevada (1986).

  4. 4.

    S. Zemon, C. Jagannath, E. Koteles, S. Shastry, P. Norris, and G. Lambert, ibid., paper K-3.

  5. 5.

    J. W. Lee, Mater. Res. Soc. Sym. Proc. 67, 29 (1986).

    CAS  Article  Google Scholar 

  6. 6.

    H. K. Choi, G. W. Turner, and B-Y. Tsaur, IEEE Electron Dev. Lett. EDL-7, 241 (1986).

    Article  Google Scholar 

  7. 7.

    H. Morkoç, C. K. Peng, T. Henderson, W. Kopp, and R. Fischer, IEEE Electron Dev. Lett. EDL-6, 381 (1985).

    Article  Google Scholar 

  8. 8.

    T. Nonaka, M. Akiyama, Y. Kawarada, and K. Kaminishi, Jpn. J. Appl. Phys. 23, L919 (1984).

    Article  Google Scholar 

  9. 9.

    R. Fischer, T. Henderson, J. Klem, W. T. Masselink, W. Kopp, and H. Morkoç, Electron. Lett. 20, 945 (1984).

    CAS  Article  Google Scholar 

  10. 10.

    S. Miyazawa and F. Hyuga, IEEE Trans. Electron Dev. ED-33, 277 (1986).

    Google Scholar 

  11. 11.

    Y. Ishii, S. Miyazawa, and S. Ishida, IEEE Trans. Electron Dev. ED-31, 800 (1984).

    CAS  Article  Google Scholar 

  12. 12.

    R. Anholt and T. W. Sigmon, IEEE Electron Dev. Lett. EDL-8, 16 (1987).

    CAS  Article  Google Scholar 

  13. 13.

    L. T. Tran, J. W. Lee, H. Shichijo, and H. T. Yuan, IEEE Electron Dev. Lett. EDL-8, 50 (1987).

    CAS  Article  Google Scholar 

  14. 14.

    R. J. Roedel, A. R. Von Neida, R. Caruso, and L. R. Dawson, J. Electrochem. Soc. 126, 637 (1979).

    CAS  Article  Google Scholar 

  15. 15.

    D. V. Lang and L. C. Kimerling, Phys. Rev. Lett. 33, 489 (1974).

    CAS  Article  Google Scholar 

  16. 16.

    T. H. Windhorn, G. W. Turner, and G. M. Metze, Mater. Res. Soc. Sym. Proc. 67, 157 (1986).

    CAS  Article  Google Scholar 

  17. 17.

    R. Fischer, W. Kopp, H. Morkoç, M. Pion, A. Specht, G. Burkhart, H. Appelman, D. McGongan, and R. Rice, Appl. Phys. Lett. 48, 1360 (1986).

    CAS  Article  Google Scholar 

  18. 18.

    H. Shiraishi, R. Yamada, N. Matsui, and M. Umeno, Jpn. J. Appl. Phys. 26, L198 (1987).

    CAS  Article  Google Scholar 

  19. 19.

    J. P. van der Ziel, R. D. Dupuis, R. A. Logan, R. M. Mikulyak, C. J. Pinzone, and A. Savage, Appl. Phys. Lett. 50, 454 (1987).

    Article  Google Scholar 

  20. 20.

    G. W. Turner, V. Diadiuk, H. Q. Le, H. K. Choi, G. M. Metze, and B-Y. Tsaur, Mater. Res. Soc. Sym. Proc. 67, 181 (1986).

    CAS  Article  Google Scholar 

  21. 21.

    H. K. Choi, G. W. Turner, T. H. Windhorn, and B-Y. Tsaur, IEEE Electron Dev. Lett. EDL-7, 500 (1986).

    CAS  Article  Google Scholar 

  22. 22.

    S. R. Murarka, Silicides for VLSI Applications (Academic Press, New York, 1983).

  23. 23.

    E. Tokumitsu, Y. Kudou, M. Konagai, and K. Takahashi, J. Appl. Phys. 55, 3163 (1984).

    CAS  Article  Google Scholar 

  24. 24.

    K. Kamon. S. Takagishi, and H. Mori, J. Cryst. Growth 73, 73 (1985).

    Article  Google Scholar 

  25. 25.

    H. Heinecke, A. Brauers, F. Grafahrend, C. Pless, N. Putz, K. Werner, M. Weyers, H. Luth, and P. Balk, J. Cryst. Growth 77, 303 (1986).

    CAS  Article  Google Scholar 

  26. 26.

    K. Kamon, M. Shimazu, K. Kimura, M. Mihara, and M. Ishii, J. Cryst. Growth 77, 297 (1986).

    CAS  Article  Google Scholar 

  27. 27.

    T. H. Ning, J. Appl. Phys. 49, 4077 (1978).

    CAS  Article  Google Scholar 

  28. 28.

    T. Ohnishi, N. Yokoyama, H. Onodera, S. Suzuki, and A. Shibatomi, Appl. Phys. Lett. 43, 600 (1983).

    CAS  Article  Google Scholar 

  29. 29.

    R. Zuleeg, P. E. Friebertshauser, J. M. Stephens, and S. H. Watanabe, IEEE Electron Dev. Lett. EDL-7, 603 (1986).

    CAS  Article  Google Scholar 

  30. 30.

    S. Tiwari, T. S. Kuan, and E. Tierney, IEEE International Electron Devices Meeting, Tech. Dig. p. 115 (1985).

  31. 31.

    T. Ikeda, T. Nagano, N. Momma, K. Miyata, H. Higuchi, M. Odaka, and K. Ogiue, IEEE International Electron Devices Meeting, Tech. Dig. p. 408 (1986).

  32. 32.

    R. Hori, G. Kitsukawa, Y. Kawajiri, T. Watanabe, T. Kawahara, and K. Itoh, IEEE Int. Sol. St. Circuit. Conf. paper FAM 20.6 (1987).

  33. 33.

    S. Miyaoka, M. Odaka, K. Ogiue, T. Ikeda, M. Suzuki, H. Higuchi, and M. Hirao, ibid., paper THAM 11.2.

  34. 34.

    A. R. Goodwin, P. A. Kirkby, I. G. A. Davies, and R. S. Baulcomb, Appl. Phys. Lett. 34, 647 (1979).

    CAS  Article  Google Scholar 

  35. 35.

    See Special Issue on Low-Temperature Semiconductor Electronics, IEEE Trans. Electron Dev. ED-34, Jan. (1987).

    Google Scholar 

  36. 36.

    M. I. Aksun, H. Morkoç, L. F. Easter, K. H. G. Duh, P. M. Smith, P. C. Chao, M. Longerbone, and L. P. Erikson, Appl. Phys. Lett. 49, 1654 (1986).

    CAS  Article  Google Scholar 

  37. 37.

    J. Buechler, E. Kasper, P. Russer, and K. M. Strohm, IEEE Trans. Electron Dev. ED-33, 2047 (1986).

    CAS  Article  Google Scholar 

  38. 38.

    C. L. Chen, unpublished.

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Correspondence to H. K. Choi.

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Choi, H.K., Turner, G.W. & Tsaur, BY. Prospects for Monolithic GaAs/Si Integration. MRS Online Proceedings Library 91, 213–224 (1987). https://doi.org/10.1557/PROC-91-213

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