MBE Growth of GaAs on Porous Silicon


GaAs layers have been grown on porous silicon (PS) substrates by molecular beam epitaxyNo surface morphology deterioration was observed onGaAs-on-PS layers in spite of the roughness of PS. A 10% Rutherford backscattering spectroscopy (RBS) channeling minimum yield for GaAs-on-PS layers as compared to 16% for GaAs-on-Si layers grown under the same condition indicates a possible improvement of crystallinity when GaAs is grown on PS. Transmission electron microscopy (TEM) reveals that the dominant defects in the GaAs-on-PS layers are microtwins and stacking faults, which originate from the GaAs/PS interface. GaAs is found to penetrate into the PS layers.

This is a preview of subscription content, access via your institution.


  1. 1.

    G. M. Metze, H. K. Choi, and B-Y. Tsaur, Appl. Phys. Lett. 45, 1107 (1984).

    CAS  Article  Google Scholar 

  2. 2.

    M. Akiyama, Y. Kawarada, and K. Kaminish, Jpn. J. Appl. Phys. 23, L843 (1984).

    CAS  Article  Google Scholar 

  3. 3.

    W. T. Masselink, T. Henderson, J. Klem, R. Fisher, P. Pearah, H. Morkoc, M. Hafich, P. D. Wang, and G. Y. Robinson, Appl. Phys. Lett. 45, 1309 (1984).

    CAS  Article  Google Scholar 

  4. 4.

    H. K. Choi, G. W. Tuner, and B-Y. Tsaur, IEEE Electron Device Lett. EDL-7, 271 (1986).

  5. 5.

    R. Fisher, D. Neuman, H. Zabel, H. Morkoc, C. choi, and N. Otsuka, Appl. Phys. Lett. 48, 1223 (1986).

    Article  Google Scholar 

  6. 6.

    S. Luryi and E. Suhir, Appl. Phys. Lett. 49, 140 (1986).

    CAS  Article  Google Scholar 

  7. 7.

    T. Unagami and M. Seki, J. Electrochem. Soc. 125, 1339 (1978).

    CAS  Article  Google Scholar 

  8. 8.

    T. L. Lin and K. L. wang, Appl. Phys. Lett. 49, 1104 (1987).

    Article  Google Scholar 

  9. 9.

    P. J. Grunthaner and F. J. Grunthaner, to be published.

Download references

Author information



Rights and permissions

Reprints and Permissions

About this article

Cite this article

Lin, T.L., Sadwick, L., Wang, K.L. et al. MBE Growth of GaAs on Porous Silicon. MRS Online Proceedings Library 91, 113–118 (1987). https://doi.org/10.1557/PROC-91-113

Download citation