MBE Growth of GaAs on Porous Silicon

Abstract

GaAs layers have been grown on porous silicon (PS) substrates by molecular beam epitaxyNo surface morphology deterioration was observed onGaAs-on-PS layers in spite of the roughness of PS. A 10% Rutherford backscattering spectroscopy (RBS) channeling minimum yield for GaAs-on-PS layers as compared to 16% for GaAs-on-Si layers grown under the same condition indicates a possible improvement of crystallinity when GaAs is grown on PS. Transmission electron microscopy (TEM) reveals that the dominant defects in the GaAs-on-PS layers are microtwins and stacking faults, which originate from the GaAs/PS interface. GaAs is found to penetrate into the PS layers.

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Lin, T.L., Sadwick, L., Wang, K.L. et al. MBE Growth of GaAs on Porous Silicon. MRS Online Proceedings Library 91, 113–118 (1987). https://doi.org/10.1557/PROC-91-113

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