Issues in the Growth of Bulk Crystals of Infrared Materials

Abstract

Selected issues in the growth of bulk single crystals for applications in infrared optoelectronics are reviewed including an overview over materials choices, bulk III-V crystal growth, and the growth of II-VI, IV-VI and I-III-VI2 compounds and alloys. The most important issues are the control of purity, perfection, stoichiometry, and uniformity during crystal growth and the control of the surface properties in wafer fabrication. Specific examples are given to illustrate problems related to these issues and to discuss approaches to their solution.

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Bachmann, K.J., Goslowsky, H. Issues in the Growth of Bulk Crystals of Infrared Materials. MRS Online Proceedings Library 90, 69 (1986). https://doi.org/10.1557/PROC-90-69

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