InAsSbBi and InSbBi: Potential Material Systems for Infrared Detection


InSb1−x Bix (0.01 < × < 0.14) and InAsSbBi quaternary alloys are potentially attractive materials for the development of semiconductor infrared detectors covering the 8–14 μm range [1,2,3].

We report for the first time, MOCVD growth of InSo1−x Bix (0.01 < × < 0.14) and InAs1−x−y Sbx Biy with 0.5 < × < 0.7 and 0.01 < y < 0.04 on both GaAs and InSb substrates using AsH3, TMSb, TEI and TMBi. Electrical measurements of the undoped InSo0.99 Bi0.01 shows a background carrier concentration of approximately 1016/cm3 and a room temperature mobility of 20,215 cm2/V.sec. To-date, these are the best reported electrical measurements for this ternary alloy.

The formation of a secondary Bi phase and single crystal growth of metallic bismuth-antimony at the surface of InSo1−x Bix which results in deterioration of morphology with increasing values of x is also investigated. A wide range of analytic techniques, including SEM, EDX, electron microprobe and AES have been employed in our surface analysis.

This is a preview of subscription content, access via your institution.


  1. 1.

    J. L. Zilko and J. E. Green, J. Appl. Phys. 51, 1549 (1979).

    Google Scholar 

  2. 2.

    K.. Oe, S. Ando and K. Sugiyama, J. Appl. Phys. 20, L303 (1981).

    CAS  Google Scholar 

  3. 3.

    A. J. Noreika, W. J. Takei, M. H. Francombe and C. E. C. Wood, J. Appl. Phys. 53, 4932 (1978).

    Google Scholar 

  4. 4.

    A. J. Noreika, J. Greggi, Jr., W. J. Takei and M. H. Francombe, J. Vac. Sci. Technol. A1, 558 (1983).

    Google Scholar 

  5. 5.

    B. Joukoff and A. M. Jean-Louis, J. Cryst. Growth. 12, 169 (1972).

    CAS  Google Scholar 

  6. 6.

    J. L. Zilko and J. E. Green, Appl. Phys. Lett. 33, 256 (1978).

    Google Scholar 

Download references

Author information



Corresponding author

Correspondence to S. M. Bedair.

Rights and permissions

Reprints and Permissions

About this article

Cite this article

Bedair, S.M., Humphreys, T.P., Chaing, P.K. et al. InAsSbBi and InSbBi: Potential Material Systems for Infrared Detection. MRS Online Proceedings Library 90, 447 (1986).

Download citation