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Infrared Reflectance Characterization of a GaAs-AlAs Superlattice

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Abstract

The optical properties of a GaAs-AlAs superlattice have been examined using the non-destructive technique of infrared reflectance spectroscopy. Through this technique, the absorption edge, the effective superlattice refractive index, the thickness, and the optical grading of the superlattice-substrate were determined. Location of the absorption edge was made from the reflectance spectrum and showed general agreement with photoluminescence measurements. A more detailed analysis of the infrared spectra indicated the presence of a transition region between the substrate and the superlattice. Based on a non-linear least squares method for fitting the experimental data, a dispersion relation for the dielectric function was obtained. This dielectric function yielded a value for the superlattice refractive index that was lower than that of the corresponding, homogeneous, AlGaAs alloy film for wavelengths between 1.0 and 2.5 micrometers.

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Authors and Affiliations

  1. US Army Research Office, Research Triangle Park, 27709, NC, USA

    J. M. Zavada

  2. Naval Research Laboratory, 20375, Washington, DC, USA

    G. K. Hubler

  3. US Army Armament R&D Center, 07801, Dover, NJ, USA

    H. A. Jenkinson

  4. North Carolina State University, 27695, Raleigh, NC, USA

    W. D. Laidig

Authors
  1. J. M. Zavada
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  2. G. K. Hubler
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  3. H. A. Jenkinson
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  4. W. D. Laidig
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Zavada, J.M., Hubler, G.K., Jenkinson, H.A. et al. Infrared Reflectance Characterization of a GaAs-AlAs Superlattice. MRS Online Proceedings Library 90, 257 (1986). https://doi.org/10.1557/PROC-90-257

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  • DOI: https://doi.org/10.1557/PROC-90-257

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