HgCdTe Versus Hgznte: Electronic Properties and Vacancy Formation Energies

Abstract

The alloy variation of the band gap and the electron and hole effective masses have been calculated for HgCdTe and HgZnTe. Band-gap bowing is larger in HgZnTe than in HgCdTe because of the larger bond length mismatch of HgTe and ZnTe; electron and hole effective masses are found to be comparable for the two alloys for a given band gap. We have calculated the electron mobility in both alloys with contributions from phonon, impurity, and alloy scattering. Contributions to the E1 line width due to alloy and impurity scattering in Hg0.7Cd0.3Te have been calculated. Results of calculations of the vacancy formation energies in HgTe, ZnTe, and CdTe are discussed.

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Correspondence to M. A. Berding.

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Berding, M.A., Chen, AB. & Sher, A. HgCdTe Versus Hgznte: Electronic Properties and Vacancy Formation Energies. MRS Online Proceedings Library 90, 127 (1986). https://doi.org/10.1557/PROC-90-127

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