Increased Uniformity of Silicon Needed for Critical Devices How Can We Improve the Float-Zone Process?

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Acknowledgements

The present studies were sponsored by NASA on a consulting basis. The resistivity and etching striation studies were performed at the Hughes Research Labs.

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Kern, E.L. Increased Uniformity of Silicon Needed for Critical Devices How Can We Improve the Float-Zone Process?. MRS Online Proceedings Library 9, 445–447 (1981). https://doi.org/10.1557/PROC-9-445

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