Increased Uniformity of Silicon Needed for Critical Devices How Can We Improve the Float-Zone Process?

MRS Online Proceedings Library volume 9, pages445–447(1981)Cite this article

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References

  1. 1.

    E.L. Kern, L.S. Yaggy and J.A. Baker, Semiconductor Silicon 1977, Electrochemical Society, Princeton, N.J., 1977, p. 52.

    Google Scholar 

  2. 2.

    “Float Zone Workshop”, Ed. E.L. Kern, NASA- Marshall Space Flight Center (to be published), (September, 1981).

  3. 3.

    P. Rava, H.C. Gatos and J. Lagowski, Semiconductor Silicon 1981, Ed. H. Huff, R. Kriegler and Y. Takeishi (Electrochemical Society, Princeton, N.J.).

  4. 4.

    K. Graff, J. Hilgarth and H. Neubrand, Semiconductor Silicon 1977, Ed. H. Huff and E. Sirtl (Electrochemical Society, Princeton, N.J.), p. 575.

  5. 5.

    H. Foil, U. Gosele and B. Kolbesen, Semiconductor Silicon 1977, Ed. H. Huff and E. Sirtl. (Electrochemical Society, Princeton, N.J.), p. 565.

  6. 6.

    A.J.R. DeKock, P.J. Roksnoer and P.G.T. Boonen, J. Crystal Growth 22, (1974) 311–20.

    Google Scholar 

  7. 7.

    F. Vieweg-Gutberlet, “Local Distribrution of Oxygen in Silicon Single Crystals and Swirl Formation” International conf. on Lattice Defects in Semiconductors, Freiburg, W. Germany, (July 1974), p. 22–25.

    Google Scholar 

  8. 8.

    E.L. Kern, paper A-1, Conference on Preparation and Properties of Electronic Materials, A.I.M.E., Boston Mass. (September 9, 1974).

    Google Scholar 

  9. 9.

    M. Kamper, “A New Striation Etch for Silicon”, J. Electrochemical Society, 117 no. 2 (February 1970).

    Google Scholar 

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Acknowledgements

The present studies were sponsored by NASA on a consulting basis. The resistivity and etching striation studies were performed at the Hughes Research Labs.

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  1. Consultant, P.O. Box 913, Del Mar, California, 92014, USA

    Edward L. Kern

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Kern, E.L. Increased Uniformity of Silicon Needed for Critical Devices How Can We Improve the Float-Zone Process?. MRS Online Proceedings Library 9, 445–447 (1981). https://doi.org/10.1557/PROC-9-445

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