Short-Period Superlattice Structure of Sn-doped In2O3(ZnO)4 and In2O3(ZnO)5 Nanowires


Two longitudinal superlattice structures of In2O3(ZnO)4 and In2O3(ZnO)5 nanowires were exclusively produced by thermal evaporation method. The diameter is periodically modulated in the range of 50-90 nm. They consist of one In-O layer and five (or six) layered Zn-O slabs stacked alternately perpendicular to the long axis, with a modulation period of 1.65 (or 1.9) nm. These superlattice nanowires were doped with 6-8 % Sn. X-ray diffraction pattern reveals the structural defects of wurtzite ZnO crystals due to the In/Sn incorporation. High-resolution X-ray photoelectron spectrum suggests that In/Sn withdraw the electrons from Zn, and enhance the number of dangling-bond O 2p states, resulting in the reduction of band gap. Photoluminescence exhibit the peak shift of near band edge emission to the lower energy as the In/Sn content increases.

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Na, C.W., Bae, S.Y. & Park, J. Short-Period Superlattice Structure of Sn-doped In2O3(ZnO)4 and In2O3(ZnO)5 Nanowires. MRS Online Proceedings Library 879, 727 (2005).

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