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Short-Period Superlattice Structure of Sn-doped In2O3(ZnO)4 and In2O3(ZnO)5 Nanowires

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Abstract

Two longitudinal superlattice structures of In2O3(ZnO)4 and In2O3(ZnO)5 nanowires were exclusively produced by thermal evaporation method. The diameter is periodically modulated in the range of 50-90 nm. They consist of one In-O layer and five (or six) layered Zn-O slabs stacked alternately perpendicular to the long axis, with a modulation period of 1.65 (or 1.9) nm. These superlattice nanowires were doped with 6-8 % Sn. X-ray diffraction pattern reveals the structural defects of wurtzite ZnO crystals due to the In/Sn incorporation. High-resolution X-ray photoelectron spectrum suggests that In/Sn withdraw the electrons from Zn, and enhance the number of dangling-bond O 2p states, resulting in the reduction of band gap. Photoluminescence exhibit the peak shift of near band edge emission to the lower energy as the In/Sn content increases.

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Authors and Affiliations

  1. Department of Chemistry, Korea University, 339-700, Jochiwon, Korea

    Chan Woong Na, Seung Yong Bae & Jeunghee Park

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  1. Chan Woong Na
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  2. Seung Yong Bae
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  3. Jeunghee Park
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Na, C.W., Bae, S.Y. & Park, J. Short-Period Superlattice Structure of Sn-doped In2O3(ZnO)4 and In2O3(ZnO)5 Nanowires. MRS Online Proceedings Library 879, 727 (2005). https://doi.org/10.1557/PROC-879-Z7.27

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  • DOI: https://doi.org/10.1557/PROC-879-Z7.27

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