Thermal Expansion of Low Dielectric Constant Thin Films by High-Resolution X-Ray Reflectivity

Abstract

By introducing high precision sample alignment technique, repeatability of incident angle to the sample surface for x-ray reflectivity (XRR) measurement is achieved to be within 0.3 arcsec. As a result, film thickness and density are possible to be measured repeatability within 0.03% and density within 0.26%. This accuracy realized to detect very small change of thermal expansion of thin films. The coefficient of thermal expansions (CTE) for porous low-k films deposited by CVD method were measured up to 400°C. The obtained values are in the range from 40 to 80 x10-6 K-1 and they are very large compare to that of copper (16-20 x10-6 K-1).

This is a preview of subscription content, access via your institution.

References

  1. 1.

    For example, Proceedings of the IEEE 2001 International Interconnect Technology Conference, San Francisco, Calfolnia, USA.

  2. 2.

    J. A. Nielsen, “Elements of Modern X-Ray Physics,” (Wiley, 2001) pp. 61–78.

    Google Scholar 

  3. 3.

    W. Wu, W. E. Wallance, E. K. Lin, and G. W. Lynn, J. Appl. Phys. 87, 1193 (2000).

    CAS  Article  Google Scholar 

Download references

Author information

Affiliations

Authors

Corresponding author

Correspondence to Kazuhiko Omote.

Rights and permissions

Reprints and Permissions

About this article

Cite this article

Omote, K., Ito, Y. Thermal Expansion of Low Dielectric Constant Thin Films by High-Resolution X-Ray Reflectivity. MRS Online Proceedings Library 875, 82 (2005). https://doi.org/10.1557/PROC-875-O8.2

Download citation