Femtosecond pulsed laser damage of Silicon (100) with thermal oxide thin films was studied in order to further understand the optical and electrical properties of thin films and to evaluate their influence on the damage of the substrate. The damage threshold as a function of film thickness (2 – 1200 nm) was measured. The damage morphology produced by single laser pulses was also investigated. Two primary morphologies were observed, one in which the oxide film is completely removed, and the other in which the film is delaminated and expanded above the surface producing a bubble feature.
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McDonald, J.P., Mistry, V.R., Ray, K.E. et al. O12.6 Fracture and Deformation of Thermal Oxide Films on Si (100) Using a Femtosecond Pulsed Laser. MRS Online Proceedings Library 875, 126 (2005). https://doi.org/10.1557/PROC-875-O12.6